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Structure of LED

A technology of light-emitting diodes and light-emitting layers, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as unachieved, and achieve the effects of reducing operating voltage, increasing the luminous area of ​​the active layer, and improving luminous efficiency.

Inactive Publication Date: 2007-08-22
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these improvements are more or less helpful to the improvement of luminous efficiency, they have not yet achieved satisfactory results.

Method used

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  • Structure of LED
  • Structure of LED
  • Structure of LED

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Embodiment Construction

[0040] In order to make the purpose, features and advantages of the present invention more easily understood by those skilled in the art of the present invention, now in conjunction with the accompanying drawings, further detailed description is as follows:

[0041] According to the light-emitting diode structure pointed out in the present invention, a Constructive Oxide Contact Structure (COCS) is used to form a high-concentration (high-conductivity) contact layer to reduce the resistance of the contact layer. When the contact layer is supplemented with an appropriate transparent electrode, it can be used to effectively increase the luminous efficiency and reduce the operating voltage.

[0042]In addition, since the contact layer of the structured oxide film has a higher carrier concentration than the bulk layer, the transparent electrode built on it can easily form an ohmic contact with it without causing carrier The concentration is not high enough to form a Schottky contac...

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Abstract

Structure of LED is built on a base plate, and includes following layers in sequence on the base plate: a buffer layer, a lower binding layer, a luminous layer, an upper binding layer and a structured type contact layer in film of oxide. The conductivities can be as P type, N type or I type. The structure also includes first electrode and second electrode (transparent electrode). The transparent electrode formed on the said contact layer is as anode of LED. The first electrode as cathode of LED formed on the lower binding layer is separated from the luminous layer, the upper binding layer, the contact layer and the transparent electrode.

Description

technical field [0001] The present invention relates to a light-emitting diode structure, in particular to a light-emitting diode structure composed of III-V group elements (III-V group element) and having a structural oxide film contact layer. Background technique [0002] Gallium Nitride (GaN)-based epitaxial technology has been a breakthrough by Japanese experts in 1993, which has set off a climax of the industrialization of GaN-based blue light-emitting diodes in the world. [0003] The known gallium nitride-based light-emitting diode structure 1 (as shown in FIG. 1 ) is formed on a substrate 10, such as Al 2 o 3 The substrate, whose structure from bottom to top is a crystal nucleus layer (nucleation layer) 12, an N-type doped conductive buffer layer (N- type conductive buffer layer) 14, a lower confinement layer (confinement layer) 16, an active layer (active layer) 18 for light emission, an upper confinement layer 20, a contact layer 22 of P-type gallium nitride and ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
Inventor 黄登凯李志翔
Owner EPISTAR CORP