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High power semi-conductor module and its use

A semiconductor, high-power technology, used in semiconductor devices, semiconductor/solid-state device components, electrical solid-state devices, etc., which can solve problems such as large AlN plates and expensive coolers

Inactive Publication Date: 2002-06-19
ABB (SCHWEIZ) AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such insulating modules unfortunately often have limited reliability (thermal expansion between base plate and substrate), while large AlN plates and coolers are prohibitively expensive

Method used

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  • High power semi-conductor module and its use
  • High power semi-conductor module and its use
  • High power semi-conductor module and its use

Examples

Experimental program
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Effect test

Embodiment Construction

[0017] image 3 A high-power semiconductor module 10 according to a preferred exemplary embodiment of the invention is shown in longitudinal section. This module comprises base plate 11, on its upper side (inner side) according to Fig. 1, according to Fig. 1, according to Fig. 1, a plurality of (for example total number 12) semiconductor chips 14 are arranged in 4 rows each with 3 chips. Around the semiconductor chip 14 an edge side is provided (mainly made of plastic) which is compressible in the vertical direction by suitable measures (eg transverse corrugations). The high-power semiconductor module 10 is closed at the top by a cover plate 13 (see also FIG. 2 ). Arranged between the cover plate 13 and the exposed top side of the semiconductor chip 14 is a first contact spring 15 via which spring (under suitable pressure) an electrical contact is produced between the cover plate 13 and the semiconductor chip 14 . Second contact springs 16 placed between groups of six semicon...

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PUM

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Abstract

A high-power semiconductor module(10)has a number of flat semiconductor chips(14)which rest with their lower face flat on a base plate(11)when the first electrical contacts is established, and have a cover plate(13), which is arranged parallel to the base plate(11), applied to their upper face with pressure, establishing second electrical contacts. In a module such as this, simplified cooling is made possible in that those faces, or outer faces, of the base plate(11)and of the cover plate(13)which face away from the semiconductor chips(14)are each electrically isolated from the semiconductor chips(14).

Description

technical field [0001] The invention relates to the field of high power electronics. In particular, it relates to a high-power semiconductor module in which a plurality of planar semiconductor chips lie planarly with their undersides on a base plate during the production of the first electrical contacts, and on the upper side of a cover plate arranged parallel to the base plate Pressure is applied while making the second electrical contact. [0002] Such a semiconductor module is, for example, described in the paper "High Power Component-From the State of Art to Future Trends" by H. Zeller, PCIM Nürnberg, May 1998 ( image 3 ) was informed. Background technique [0003] High-power semiconductor modules of various designs are known from the state of the art (see for example EP-A1-0597 144 or US Pat. No. 5,978,220 or US Pat. No. 6,087,682). [0004] The high power semiconductor modules operate at voltages up to 10KV per module. The voltage can be much h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/48H01L25/07H01L25/18
CPCH01L2924/01033H01L2924/01005H01L25/072H01L24/72H01L2924/01082H01L2924/01004H01L2924/13055
Inventor T·朗
Owner ABB (SCHWEIZ) AG