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Large capacity insulation grating bipolar transistor driving circuit

A bipolar transistor and drive circuit technology, applied in electrical components, electronic switches, pulse technology, etc., can solve the problems of inability to adjust the on and off time of IGBT, and the inability to use driver modules.

Inactive Publication Date: 2003-03-12
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The drive capacity of the above drive circuit module is generally a 300A / 1200V or 400A / 600V device. When the IGBT capacity exceeds the above capacity, this drive module cannot be used.
When multiple IGBTs are connected in parallel to achieve large capacity, the driving method of driving a tube with one driving block is often used, that is to say, it is necessary to use as many driving modules as IGBT; at the same time, the driving circuit cannot adjust the conduction of the IGBT and turn-off time to achieve the best turn-on and turn-off of the IGBT, and the turn-on and turn-off time of the IGBT has a direct impact on the peak voltage and loss of the IGBT

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  • Large capacity insulation grating bipolar transistor driving circuit
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  • Large capacity insulation grating bipolar transistor driving circuit

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Embodiment Construction

[0023] Such as figure 1 shown. The large-capacity IGBT driving circuit of the present invention is composed of a photoelectric isolation stage 10, a shaping circuit 1, a shaping circuit 2, a level conversion circuit 30, a power amplification stage 20 and other parts. The photoelectric isolation stage 10 is composed of a high-speed optocoupler T1 for isolation, resistors R1 and R2; the shaping circuit 1 and the resistor R3 are connected between the photoelectric isolation 10 and the gate of the MOS transistor T4, and the shaping circuit 2 and the level conversion circuit 30 Connected between the photoelectric isolation 10 and the gate of the MOS transistor T5; the power amplifier stage 20 is composed of low-voltage MOS transistors T4, T5, resistors R8, R9, R10, R11, power supply V2, -V3, and the drain of the MOS transistor T4 is The resistors R8 and R9 are connected to the drain of the MOS transistor T5, the sources of the MOS transistors T4 and T5 are respectively connected ...

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Abstract

The characteristic of the drive circuit of the large capacity insulated gate bipolar transistor (IGBT) is that the power amplifier stage is composed of the lowr voltage MOS tubes (T4, T5). The said drive circuit also includes the shaping circuit (1), the resistor (R3), the shaping circuit (2) and the level converting circuit. The one end of the photoelectricity isolation statge is connected to the shaping circuit (1), the resistor (R3) and the grid of the MOS tube (T4) in sequence. The other end is connected to the shaping circuit (2), the level converting circuit (30) and the grid of the MOS tube (T5) in sequence. The invented drive circuit can drive large capacity IGBT and adjust the time to turn on and the duration of IGBT so as to realize the on / off state at optimal time.

Description

technical field [0001] The invention relates to an insulated gate bipolar transistor drive circuit, in particular to a large capacity insulated gate bipolar transistor drive circuit. Background technique [0002] Insulated Gate Bipolar Transistor (Isolated Gate Bipolar Transistor), referred to as IGBT, is currently the most widely used power electronic switching device in the medium and large capacity range. IGBT is a voltage control device, which has the advantages of simple driving circuit, low driving power and high operating frequency. The driving circuit is very important to the normal operation of the IGBT and directly affects the switching speed of the device, and the switching speed has a direct impact on the peak voltage acting on the device and the switching loss of the device. [0003] The representative IGBT drive circuits currently available mainly include: [0004] 1. EXB841 of Japan Fuji Corporation, the maximum driving capacity is 400A / 1200V IGBT; [0005]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/795
Inventor 瞿文龙
Owner TSINGHUA UNIV