Unlock instant, AI-driven research and patent intelligence for your innovation.

Strong dielectric storage accelerated test method

A ferroelectric, accelerated test technology, applied in the field of accelerated test, can solve the problem of fitting characteristics that cannot meet the durability characteristics of ferroelectric memory, etc.

Inactive Publication Date: 2004-04-14
PANASONIC CORP
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0025] However, after repeated acceleration tests using only the reciprocal model of voltage stress to apply acceleration conditions to the endurance characteristics of ferroelectric memories, it became clear that the fitting characteristics of the endurance characteristics of ferroelectric memories cannot be satisfied even when the reciprocal model is applied.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Strong dielectric storage accelerated test method
  • Strong dielectric storage accelerated test method
  • Strong dielectric storage accelerated test method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] Below, refer to Figure 1 ~ Figure 4 One embodiment of the present invention will be described.

[0055] Under the actual application conditions of a ferroelectric memory having a capacitive element having a ferroelectricity, it is necessary to determine in advance the acceleration coefficient (K) necessary for evaluating the endurance characteristics in an accelerated test for evaluating endurance characteristics under accelerated conditions. Because the accelerated test method of the present invention is an accelerated test using both voltage stress and temperature stress, in order to determine the acceleration coefficient, the degree to which the endurance characteristics of a ferroelectric memory with a ferroelectric capacitor is affected by voltage acceleration and temperature acceleration is considered. It is necessary to determine the polarization reversal voltage dependence and temperature dependence determination model of the endurance characteristics of the ab...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An accelerated test method evaluates, under accelerated conditions (a temperature T2 and a voltage V2), an endurance characteristic of a ferroelectric memory device having a capacitor element including a ferroelectric film under actual operating conditions (a temperature T1 and a voltage V1). An acceleration factor (K) required to evaluate the endurance characteristic is derived by using an expression: logK = A(1 / V1 - 1 / V2) + B(1 / V1T1 - 1 / V2T2) (where each of A and B is a constant).

Description

technical field [0001] The present invention relates to an accelerated test of a ferroelectric memory for evaluating the endurance characteristics of a ferroelectric memory provided with a capacitive element having a ferroelectric film. Background technique [0002] The endurance characteristics of a ferroelectric memory having a capacitive element with a ferroelectric film is determined by the polarization inversion fatigue characteristic in which the remanent polarization value of the ferroelectric film decreases as the number of inversions of the ferroelectric film increases. Accelerated tests for evaluating durability characteristics have conventionally used only voltage stress as accelerated conditions. [0003] Below, refer to Figure 5 and Figure 6 The endurance characteristics of the ferroelectric memory of the first prior example (Patent Document 1) evaluated by an acceleration test method using only voltage stress as the acceleration condit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/22G11C29/50
CPCG11C29/50016G11C29/50G11C11/22G11C2029/5004
Inventor 永桥克己野间淳史
Owner PANASONIC CORP