Semiconductor memory device

Abstract

In a sense amplifier, local input / output lines LIO, / LIO are kept at the prescribed voltage by transistors QV1 and QV2. Also, Transistors QP3 and QP7 constituting a current mirror supply an operation current in accordance with a pass current passing through transistors QP1 and QP5 to sense nodes SA, / SA. Also, Transistors QN2 and QN3 constituting a current mirror extract an operation current n accordance with a pass current passing through transistors QP1 and QP5 from the sense nodes SA, / SA. Thereby, voltage difference in accordance with operation current difference is caused in the sense nodes SA, / SA.

Description

technical field [0001] The present invention relates to a non-volatile storage device, in particular to a circuit structure of a sense amplifier for amplifying storage data of a storage unit. Background technique [0002] In recent years, nonvolatile storage devices capable of storing nonvolatile data are becoming mainstream. For example, there is a flash memory that can be highly integrated. Furthermore, as a new generation of non-volatile memory devices, MRAM (Magnetic Random Memory: Magnetic Random Memory) devices that use thin-film magnets for non-volatile data storage or use thin-film materials called chalcogenides (chalcogenide) for data storage Stored OUM(R) (Ovonic UnifiedMemories) devices, etc. are of particular concern. [0003] When reading data stored in a memory cell used as a memory element of these nonvolatile memory devices, a structure is generally adopted in which data is read out based on a measured passing current at that time by applying a predetermine...

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Problems solved by technology

[0007] However, in this structure, in order to fully ensure the voltage difference from the reference voltage, that is, to ensure the data read margin, the operating voltage of the circuit must be increased, and it is difficult to use a lower operating voltage to ensure the data read margin.

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