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CMP sizing material, polishing method and method for manufacturing semiconductor device

A slurry and polishing surface technology, which is applied in semiconductor/solid-state device manufacturing, manufacturing tools, polishing compositions, etc., can solve the problems of impracticality and low polishing force

Inactive Publication Date: 2004-12-01
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, although a slurry of composite particles as polishing particles and an organic compound such as a surfactant or an organic acid is used, it is not practical because the polishing force is small.

Method used

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  • CMP sizing material, polishing method and method for manufacturing semiconductor device
  • CMP sizing material, polishing method and method for manufacturing semiconductor device
  • CMP sizing material, polishing method and method for manufacturing semiconductor device

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Embodiment Construction

[0018] Embodiments of the present invention will be described below.

[0019] The present inventors have found that a particle mixture of composite type particles and resin particles is used as the polishing particles in order to effectively apply the slurry supplied to the polishing cloth to the surface to be polished, while reducing pitting and abrasion. , and it is effective to limit the viscosity to less than 10 mPas.

[0020] figure 1 It is a schematic diagram of composite pellets and resin pellets. Composite particles 10 are composed of polymer particles that are resin components 11 and inorganic components 12 that are composited with the polymer particles. Compounding refers to chemical or non-chemical combination. The inorganic component 12 can be formed, for example, as a silicon compound part or a metal compound part. The inorganic component 12 may not only be bonded to the surface of the resin component 11 as shown in the figure, but may also be coated inside. ...

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PUM

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Abstract

There is disclosed a CMP slurry comprising composite type particles composed of a resin component and an inorganic component, which are complexed with each other, and resin particles, the CMP slurry having a viscosity of less than 10 mPas.

Description

[0001] Cross References to Related Applications [0002] This application is based on and claims the benefit of priority from Japanese Priority Patent Application No. 2003-136014 filed on May 4, 2003, and the entire contents of this application are incorporated by reference. technical field [0003] The present invention relates to a slurry for CMP (Chemical Mechanical Polishing), a polishing method using the same, and a manufacturing method of a semiconductor device. Background technique [0004] In the next generation of high-performance LSI, components must be highly integrated, and the design standard of damascene wiring formed by CMP is now strictly designed to be between 0.07-30μm in wiring width and 100nm in film thickness. [0005] In the case of forming damascene wiring with a film thickness of 100nm, in the conventional CMP method, polishing particles released from the polishing cloth during polishing form free particles and are pressed into the surface to be polis...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00C09G1/02C09K3/14H01L21/304
CPCC09G1/02B24B37/044C09K3/1409C09K3/1463
Inventor 南幅学松井之辉矢野博之
Owner KK TOSHIBA