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Wafer processing method

一种晶片、金属薄膜的技术，应用在石材加工设备、金属加工设备、制造工具等方向，能够解决降低器件质量等问题

Active Publication Date: 2005-02-16
DISCO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Incidentally, when the thickness of the wafer is reduced to about 100 μm, the wafer is broken by the heat in the sputtering chamber when the metal thin film is formed on the back side of the wafer by the metal thin film forming apparatus, thereby deteriorating the quality of the device

Method used

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Embodiment Construction

[0030] A method of processing a wafer according to a preferred embodiment of the present invention will be described below with reference to the accompanying drawings.

[0031] figure 1 A perspective view showing a wafer to be processed according to the invention and a protection to be bonded to the wafer. figure 1 The wafer 2 shown is formed in a circular shape, a plurality of dividing lines (dicing lines) 21 are formed in a lattice pattern on the front surface 2a of the wafer 2, and individual semiconductor devices 22 are formed in a plurality of regions separated by the plurality of dicing lines 21. form. The protector 3 is formed in a disk shape and is made of a material having high hardness such as a glass substrate, and its front face 3a and back face 3b are flat. If such a protector 3 is a glass substrate, it preferably has a thickness of 1 to 3 mm. In addition to glass, ceramics, metal materials such as stainless steel, resins, and the like can be used as the materi...

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Abstract

A method of processing a wafer having devices in a plurality of areas sectioned by streets arranged in a lattice pattern on the front surface to form a metal film on a back surface thereof, wherein a laser beam application step for applying a laser beam capable of passing through a wafer, along the streets formed on the wafer to form a deteriorated layer is carried out before a metal film forming step for forming a metal film on the back surface of the wafer.

Description

technical field [0001] The present invention relates to a method of processing a wafer having individual semiconductor devices (such as light emitting diodes or transistors, etc.) . Background technique [0002] A wafer having individual semiconductors (such as light emitting diodes or transistors, etc.) formed in a plurality of regions separated by dividing lines (scribing lines) arranged in a lattice pattern on the front surface thereof is ground backside so as to have a predetermined thickness , and then covered with a thin film of gold, aluminum or titanium with a thickness of about 1 μm. The wafer on which the metal thin film is formed on the backside is cut along dicing lines to separate it into individual devices. The devices thus obtained are widely used in electronic equipment such as mobile phones and personal computers. In order to reduce the weight and size of electronic equipment incorporating the devices, it is desirable to make these devices as thin as poss...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/301H01L21/00H01L21/02H01L21/304H01L21/78
CPCH01L21/304H01L21/78H01L21/67092
Inventor 长泽唯人永井祐介
Owner DISCO CORP