Equipment for reacting sputtering

Abstract

A device for reactive sputtering, wherein a cathode is applied a discharge voltage for a plasma, and a working gas and a reactive gas are introduced into a sputter chamber. The total gas flow in the sputter chamber is controlled with the aid of a valve, while the ratio of the partial pressures of both gases is kept constant.

Description

technical field [0001] The invention relates to a device for reactive sputtering according to the preamble of patent claim 1 . Background technique [0002] Usually, in reactive sputtering, at least two gases are used: a gas, which in most cases is usually an inert gas, and which excites particles outside the target in ionized form; Compounds are formed. The compound is then deposited as a thin film layer on a substrate, such as a glass plate. [0003] In order to accelerate ions of a noble gas to a target, a voltage must be applied to the target. The voltage between the target and the counter depends inter alia on the gas pressure obtained within the sputtering chamber. If the non-conductive substrate to be coated is moving within the sputtering chamber, this voltage also depends on the specific position of the substrate. [0004] Therefore, the dependence of voltage on pressure can be interpreted as, at high pressure, atoms are still present in the gas volume, so that ...

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Problems solved by technology

On the contrary, in most cases, the sputtering rate of the reaction product is generally lower than that of the pure metal

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