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Circuit for controlling voltage level, bias detection circuit and compensation method

A technology for controlling voltage and level, applied in information storage, static memory, digital memory information, etc., can solve problems such as emphasizing temperature and voltage tracking, and not being able to respond to real needs

Active Publication Date: 2010-10-06
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These known solutions use positive and negative temperature compensation current sources to bias the detection circuit, and only focus on temperature and voltage tracking, so they cannot reflect the real needs of word lines due to process variations.

Method used

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  • Circuit for controlling voltage level, bias detection circuit and compensation method
  • Circuit for controlling voltage level, bias detection circuit and compensation method
  • Circuit for controlling voltage level, bias detection circuit and compensation method

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Embodiment Construction

[0032] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, a preferred embodiment is exemplified below and described in detail in conjunction with the accompanying drawings.

[0033] see Figure 5 , in the embodiment of the present invention, the voltage V is provided PPThe detection circuit, which can be used to control the voltage level, includes a PMOS transistor 501 , a MOS subthreshold current source 600 , and a current source 700 that does not change with the bias voltage. The PMOS transistor 501 is coupled to the voltage coupler 10 , the MOS subthreshold current source 600 is coupled to the voltage coupler 20 , and the current source 700 that does not change with the bias voltage is coupled between the MOS subthreshold current source 600 and the PMOS transistor 501 .

[0034] In addition, an inhibit coupler 800 is provided between the current source 700 and the MOS subthreshold current source 600 which...

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Abstract

The present invention provides a circuit for controlling voltage level, bias detection circuit and compensation method, the circuit for controlling voltage level includes a first PMOS transistor, MOS sub-threshold current source and a bias independent current source. The first PMOS transistor is coupled to a first voltage, the gate of the PMOS transistor being coupled to the drain of the PMOS transistor. The MOS sub-threshold current source is coupled to a second voltage coupler. The bias independent current source coupled to the MOS sub-threshold current source and the PMOS transistor intermediate the MOS sub-threshold current source and the PMOS transistor. The invention provides a circuit for perspective word line voltage level under the differnt conditions of the manufacture procedure, voltage and temperature change. The word line voltage level does not aim the temperatue only.

Description

technical field [0001] The present invention relates to a circuit for controlling voltage levels, suitable for use in semiconductor devices. Background technique [0002] Variations in process, temperature and / or voltage can affect the circuit operating characteristics of the board assembly. Known methods and circuits typically use positive and negative temperature coefficient current sources to bias detection circuits to improve variability due to process, temperature, and / or voltage changes. However, only the focus is on temperature compensation and / or voltage tracking, typically bipolar devices are used to generate a positive temperature compensated current source. [0003] In the illustrated example, the positive supply voltage is designed as the supply voltage V DD , and a ground supply voltage with 0 volts is designed as the supply voltage V SS . [0004] figure 1 It is a storage unit representing a known dynamic random access memory (DRAM). The memory cell inclu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/4074G11C11/401G11C11/407G11C11/4063
CPCG11C5/147G11C8/08
Inventor 邹宗成
Owner TAIWAN SEMICON MFG CO LTD