High voltage buffer module and voltage detecting circuit

Abstract

The invention provides a high-voltage buffer module and a voltage detector thereof. The high-voltage buffer module is applied to an input / output buffer circuit, which is coupled between the high-voltage and the low-voltage circuits. The high-voltage buffer module is operated between a first supply voltage and a second supply voltage which is complementary to the first supply voltage. The high-voltage buffer module comprises a pull-up module and the voltage detector. The pull-up module is coupled between the first supply voltage and an output node, which outputs the first supply voltage to theoutput node according to the input signals. According to the decreasing rate of the first supply voltage, the voltage detector selects at least one bias voltage among the voltage levels of the presetcollection in the pull-up module. The high-voltage buffer module enables the output buffer circuit of the single gate oxide layer to maintain an operable state at any operating voltage to avoid the invalid operation of the high-voltage buffer output module at a low voltage.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a single gate oxide input / output buffer circuit. Background technique [0002] There is an increasing demand for sub-micron semiconductor devices with high density, high performance, and large-scale integration. The manufacturing process of these semiconductor devices requires faster speed, higher reliability, and higher productivity. As the volume of semiconductor devices continues to shrink, existing semiconductor technologies for forming gate oxide layers will be questioned. [0003] A conventional semiconductor device has a substrate that includes many electrically isolated regions called active regions. The active region generally includes a source region and a drain region of a transistor, and a channel region is used to separate the source region and the drain region. A gate electrode is formed on the channel region for switching the transistor. A gate oxide la...

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Problems solved by technology

In the energy saving mode, the driving problem of the high voltage buffered output module 226 will be more serious, and then cause the failure of the input / output buffer circuit. When the reduced high supply voltage and the low supply voltage The difference is approximately equal to or less than the threshold voltage of PMOS transistor 234 (V THP ), the source-gate voltage difference of the PMOS transistor 234 is insufficient to turn on the PMOS transistor 234, thus causing the failure of the output buffer circuit

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