High voltage buffer module and voltage detecting circuit

Abstract

The invention provides a high-voltage buffer module and a voltage detection circuit. The high-voltage buffer module is suitable for an input / output buffer circuit. The I / O buffer circuit is coupled between the high voltage circuit and the low voltage circuit. The high voltage buffer module operates between a first supply voltage and a second supply voltage complementary to the first supply voltage. High voltage buffer module, including pull-up module and voltage detection circuit. The pull-up module is coupled between the first supply voltage and the output node, and outputs the first supply voltage to the output node according to the input signal. The voltage detection circuit is used to select at least one bias voltage for the pull-up module from a preset set of voltage levels, and the voltage detection circuit selects the bias voltage according to the drop range of the first supply voltage. This enables the single gate oxide layer output buffer circuit to maintain an operable state under any operating voltage, so as to eliminate the failure condition that occurs when the high voltage buffer output module operates at low voltage.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a single gate oxide input / output buffer circuit. Background technique [0002] There is an increasing demand for sub-micron semiconductor devices with high density, high performance, and large-scale integration. The manufacturing process of these semiconductor devices requires faster speed, higher reliability, and higher productivity. As the volume of semiconductor devices continues to shrink, existing semiconductor technologies for forming gate oxide layers will be questioned. [0003] A conventional semiconductor device has a substrate that includes many electrically isolated regions called active regions. The active region generally includes a source region and a drain region of a transistor, and a channel region is used to separate the source region and the drain region. A gate electrode is formed on the channel region for switching the transistor. A gate oxide la...

AI Technical Summary

Problems solved by technology

In the energy saving mode, the driving problem of the high-voltage buffered output module 226 will be more serious, which will cause the failure of the I / O buffer circuit

When the difference between the reduced high supply voltage and the low supply voltage is approximately equal to or less than the threshold voltage of the PMOS transistor 234 (V THP ), the source-gate voltage difference of the PMOS transistor 234 is insufficient to turn on the PMOS transistor 234, thus causing the failure of the output buffer circuit

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