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Semiconductor device and method for production thereof

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as line electromigration damage, and achieve the effect of improving electromigration resistance

Inactive Publication Date: 2006-08-16
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This makes the wire vulnerable to damage by electromigration when electrons flow from higher layers to lower layers

Method used

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  • Semiconductor device and method for production thereof
  • Semiconductor device and method for production thereof
  • Semiconductor device and method for production thereof

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Embodiment Construction

[0026] Embodiments of the present invention will be described with reference to the drawings.

[0027] figure 1 is a sectional view showing one example of a semiconductor device according to the present invention.

[0028] A semiconductor substrate 1, eg silicon, is shown. On the substrate 1 is a silicon oxide interlayer insulating film. On the interlayer insulating film 2 are tungsten contacts 3 . On the substrate 1 are transistors and other semiconductor components connected to contacts 3 .

[0029] On the interlayer insulating film 2 and the contact 3 is an interlayer insulating film 4 . In this embodiment, interlayer insulating film 4 is composed of polyarylene organic insulating film 5 and silicon oxide hard mask 6 which has been used to form insulating film 6 . In addition, the insulating film 5 may also be formed of SiCOH, or may be replaced by a so-called low-k film.

[0030] In the interlayer insulating film 4 is a wiring groove 4a. The copper first metal wire ...

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Abstract

Disclosed herein is a semiconductor device with improved electromigration durability and a method for producing the semiconductor device. A semiconductor device includes: an interlayer insulating film formed on a first metal wiring; a second metal wiring formed by embedding in the interlayer insulating film; a metal contact formed by embedding in the interlayer insulating film, for connecting between the first metal wiring and the second metal wiring; a first capping layer formed between the first metal wiring and the metal contact; and a barrier metal layer formed between the second metal wiring and the interlayer insulating film, for preventing metal diffusion in the second metal wiring.

Description

technical field [0001] The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, and more particularly, to a semiconductor device related to trench line technology such as dual damascene or single damascene, and a method for manufacturing the same. Background technique [0002] The wiring material of LSI is changing from aluminum alloy to copper because the latter has better electromigration durability and lower resistance than the former. Since difficulties are often encountered in dry etching of copper, it is formed by first forming a wire groove in the interlayer insulating layer, then filling the wire groove with wiring material, and finally removing the excess part of the wiring material with CMP (Chemical Mechanical Polishing) copper wiring. [0003] Furthermore, copper wires are known to show improved electromigration resistance when covered with CoWP cladding (see Non-Patent Document 1: T. Ishigami et al., "High...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L21/768
CPCH01L23/5226H01L23/53295H01L2924/0002H01L21/76868H01L21/76843H01L21/76865H01L21/76846H01L23/53238H01L21/76849H01L21/76874H01L2924/00H01L21/3205
Inventor 驹井尚纪金村龙一大冈丰
Owner SONY CORP