Film forming method and film forming apparatus

a film forming and film technology, applied in electrical devices, semiconductor devices, semiconductor/solid-state device details, etc., can solve the problems of poor adhesion of dielectric constant insulation film and insulation film as etching mask and chemical mechanical polishing stopper, poor adhesion of inorganic type film and organic type film, etc., to achieve the effect of improving adhesion

Inactive Publication Date: 2005-02-03
KONISHI NOBUO +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011] Considering the above-described circumstances, an object of the present invention is to provide a film forming method and a film forming apparatus that improves an adhesion between low-dielectric inter-layer insulation films and the like and adhesion between an inter-layer insulation film and other neighboring films.

Problems solved by technology

However, there is a problem that adhesion of a low dielectric constant insulation film and an insulation film as an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) is poor and the low dielectric constant insulation film peels off when the Chemical Mechanical Polishing process (CMP process) is performed.
In addition, the problem is not only the poor adhesiveness of an inorganic type film and an organic type film but also the poor adhesiveness of an organic type film and a resist film of the same organic type is also a problem in the process of forming an inter-layer insulation film.
However, since the adhesive layer in the method of using chemical bonding strength is very thin, bonding strength is not so strong, therefore, adhesive strength can not be improved greatly.
In addition, when the adhesive layer is made thicker in order to increase chemical bonding strength, there is a drawback that the dielectric constant will become high.
Thus it is not appropriate to make such adhesive layer with high dielectric constant thick from the point of view of inter-layer insulation film manufacturing process of producing multi-layer films of the present day.

Method used

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  • Film forming method and film forming apparatus
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second embodiment

[0086] In addition, as a flow chart showing a processing flow in the second embodiment, the surface reforming process in the surface reforming process station 70 is applied in step 2 and step 8 shown in FIG. 7.

[0087]FIG. 13 and FIG. 14 are a plan view and a sectional view respectively of the surface reforming process station 50 according to another embodiment. Same symbols as in FIG. 4, FIG. 5 and FIG. 12 are used for the same structure corresponding to FIG. 13 and FIG. 14 and an explanation thereof is omitted.

[0088] In the surface reforming process station 90 of the present embodiment, a high-density plasma generating apparatus 92 is provided to be able to move along a guide rail 93 in Y-direction. The high-density plasma generating apparatus 92 is a high-density plasma generating apparatus using, for example, ICP (Inductively Coupled Plasma). And a shutter 94 is provided at an opening 98 that is used for transferring the wafer W to and from the arm 31, capable of hermetically sea...

first embodiment

[0108] The reforming process by the surface reforming process station 50 of parallel plate type in the first embodiment mentioned above is performed under reduced pressure state, however, the process can also be performed under normal pressure.

[0109] Furthermore, each of the embodiments described above is not limited to the application to a semi-conductor wafer processing system, however, the present invention can also be applied to a system processing a glass substrate used with liquid crystal display and the like.

[0110] As described above, according to the present invention, regardless of an organic type and inorganic type insulation film, an inorganic film on which the hydrophobic process is being performed, a SiOF film etc. adhesion between the films and also between the inter-layer insulation film and other neighboring film can be improved.

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Abstract

The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a film forming method and a film forming apparatus that forms an inter-layer insulation film and the like onto a semiconductor wafer in the semiconductor manufacturing steps. [0003] 2. Description of the Related Art [0004] In a manufacturing step in a process of a semiconductor device, for example, SOD (Spin on Dielectric) system is used for forming an inter-layer insulation film. In the SOD system, a coating film is spin-coated on a wafer and an inter-layer insulation film is formed with performing processes like a chemical process or a heating process on the wafer. [0005] For example, in a case of forming an inter-layer insulation film with sol-gel method, first of all, a solution in which an insulation film material is dispersed and dissolved into an organic solvent is supplied on a semiconductor wafer (hereinafter referred to as a “wafer”). Next a gelling process is performed on ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/20H01L21/768
CPCH01L21/76825H01L21/76826H01L21/76837H01L21/76829H01L21/76828H01L21/20
Inventor KONISHI, NOBUOIWASHITA, MITSUAKIOHNO, HIROKIKAWAMURA, SHIGERUSUGIURA, MASAHITO
Owner KONISHI NOBUO
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