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Method of conditioning polishing pad for semiconductor wafer

a polishing pad and semiconductor technology, applied in the field of conditioning a polishing pad for semiconductor wafers, can solve the problems of the dressing method that involves spraying high-pressure water onto the polishing pad has not been able to make the most of its superiority, etc., and achieves the effect of optimizing the polishing rate, reducing the polishing rate, and maintaining the polishing performance of the polishing pad in a stable condition

Inactive Publication Date: 2005-07-28
TOSHIRO DOI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a method for conditioning a polishing pad used for semiconductor wafer polishing. The method involves spraying a cleaning liquid onto the polishing pad and then supplying abrasive slurry containing no abrasive grains. This method prevents a decrease in polishing rate due to a decrease in pH and ensures stable polishing performance for a long time. Additionally, the method can be performed by spraying the cleaning liquid onto the polishing pad while causing relative movements between the polishing pad and a dresser or by adding abrasive slurry containing no abrasive grains after conventional dressing by a dresser.

Problems solved by technology

However, dressing that involves spraying high-pressure water onto a polishing pad has the disadvantages that a polishing liquid (abrasive slurry) which remains on the polishing pad surface, and within the polishing pad is diluted, resulting in a decrease in the polishing rate.
Therefore, a dressing method that involves spraying high-pressure water onto a polishing pad has not been able to make the most of its superiority because of the problems as already stated although it has better dressing performance than dressing methods using conventional pressers as described above.

Method used

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  • Method of conditioning polishing pad for semiconductor wafer
  • Method of conditioning polishing pad for semiconductor wafer
  • Method of conditioning polishing pad for semiconductor wafer

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first embodiment

[0048] Preferred embodiments of a conditioning method of a pad for semiconductor wafer related to the present invention will be described in detail below with reference to the accompanying drawings. First, the first embodiment will be described.

[0049]FIG. 1 is a structural drawing of a conditioning device 10 of a polishing pad for semiconductor wafer to which a method of conditioning a polishing pad for semiconductor wafer related to the present invention is applied. This conditioning device 10 dresses a polishing pad 50 by spraying a cleaning liquid such as pure water from a nozzle 14 for spraying onto the polishing pad 50 on a surface 52 of a polishing device and, after dressing, conditions the polishing pad 50 on a surface plate 52 of a polishing device by spraying a chemical liquid such as abrasive slurry from a nozzle 74 for chemical liquid supply onto the polishing pad 50.

[0050] The nozzle 14 for dressing is connected to a pump 18 via a pipe 16, and this pump 18 is connected ...

second embodiment

[0052] The nozzle 74 for chemical liquid supply and the pipe 16 are arranged so that a chemical liquid such as abrasive slurry can be injected at the polishing pad 50. Because this arrangement is the same as the arrangement of the nozzle 14 for dressing, the pipe 16, etc., the diagrammatic representation and description of a flexible hose, a tank, a table, etc. used in this arrangement are omitted. Incidentally, the same arrangement is shown in FIG. 2 that explains the second embodiment, which will be described later.

[0053] In the arrangement of FIG. 1, the nozzle 74 for chemical liquid supply supplies a chemical liquid at a pressure of not less than 15 MPa but not more than 30 MPa in the same manner as the nozzle 14 for dressing, which will be described later. However, it is possible to adopt also a nozzle that simply adds a chemical liquid dropwise in place of this nozzle. Furthermore, it is possible to use a nozzle of the same pressure specification of not less than 15 MPa but no...

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Abstract

Dressing is performed by spraying a cleaning liquid onto a polishing pad and after that abrasive slurry injected from a nozzle is supplied to the polishing pad. Provided is a method of conditioning a polishing pad for semiconductor wafer which is suitable for keeping the polishing performance of a polishing pad, provided with a polishing device for semiconductor wafer, in a stable condition for a long time.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a method of conditioning a polishing pad for semiconductor wafer and, more particularly, to a method of conditioning a polishing pad for semiconductor wafer which is suitable for keeping the polishing performance of a polishing pad of a semiconductor wafer polishing device in a stable condition for a long time. [0003] 2. Description of the Related Art [0004] There is a chemical mechanical polishing (CMP) method as one of the polishing methods of semiconductor wafers. Under this polishing method, a polishing solution is prepared by causing abrasive grains formed from silica etc. to be suspended in an alkaline solution. The polishing solution is dripping onto a polishing pad, during a semiconductor wafer and the polishing pad are caused to perform relative movements while both are being pressed against each other. A reaction product is formed on the surface of the semiconductor wafer d...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B24B53/007B24B53/017H01L21/304
CPCB24B53/017
Inventor SEIKE, YOSHIYUKIMIYACHI, KEIJIAMARI, MASAHIKOPHILIPOSSIAN, ARADOI
Owner TOSHIRO DOI