Diode junction poly fuse

Abstract

System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, preferably a p-type impurity. The anode and the portion of the link adjoining the anode are doped with a second impurity, preferably an n-type impurity. The junction of the first impurity and the second impurity in the link forms a p-n junction diode. A conductive layer, such as a silicide layer, is formed over the p-n junction diodes. In an alternative embodiment, a plurality of p-n junction diodes may be formed in each link. One or more contacts may be formed to provide electrical contact to the cathode and the anode.

Description

TECHNICAL FIELD [0001] The present invention relates generally to a system and method for an electrical fuse, and more particularly to a system and method for an electrical fuse for use in semiconductor devices. BACKGROUND [0002] Fuses are commonly used in integrated circuits to provide redundancy and programming capabilities. To increase yield in integrated circuits such as memory chips, it is common to include redundant memory cells on the memory chips. If a memory circuit is found to be defective or is not needed, the fuse may be blown thereby activating or deactivating the redundant memory cells. Another common practice is to utilize fuses to program or customize integrated circuits for a particular application or customer. In this manner, the same chip may be produced and customized for individual customers by programming the fuses after fabrication, thereby reducing the fabrication costs. [0003] Typically, fuses comprise a conductive link that may be blown or ruptured to preve...

AI Technical Summary

Benefits of technology

[0008] These and other problems are generally solved or circumvented, and technical advantages are generally achiev...

Problems solved by technology

If a memory circuit is found to be defective or is not needed, the fuse may be blown thereby activating or deactivating the redundant memory cells.

The use of the laser, however, requires complicated processing steps and expensive laser equipment.

Because the p-n junction diode does not allow the current to flow in this configuration, the current flows through the silicided layer.

The current crowding in the silicide layer over the p-n junction causes silicide migration or melting of the link, thereby blowing the fuse.

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