Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process

a technology of conformal ion and nanoscale deposition, applied in the field of conformal thin film deposition methods and apparatuses, can solve the problems of affecting the overall yield, affecting the coverage of the step, and the requirement of deposition becoming more critical, and achieves the effect of improving the coverage characteristics and high aspect ratio features
US20050266173A1Inactive
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Estimated Expiration
Not applicable · inactive patent

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Abstract

A deposition system and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source, and a distributed metal source for forming plasma and introducing metal vapor to the deposition system, respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 1012 cm−3, and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.
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Description

FIELD OF THE INVENTION

[0001] The present invention relates to a method and apparatus for thin film deposition, and more particularly to a method and apparatus for conformal thin film deposition in high aspect ratio features on a substrate. DESCRIPTION OF RELATED ART

[0002] In the metallization of high aspect ratio (HAR) via holes and contacts, as well as trenches, on semiconductor substrates for inter-level and intra-level wiring of integrated circuits (ICs), barrier layers and seed layers are typically deposited that are required to have sufficient sidewall and bottom coverage to produce the desired barrier or seed properties. For example, it is usually desirable to have a barrier layer as thin as possible in order to minimize its electrical resistance; however, it must not sacrifice its barrier properties. Additionally, for example, the barrier layer must be conformal and continuous without voids in order to prevent diffusion of seed layer material into the dielectric layer and o...

Claims

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