Device having a redundant structure

a technology of redundant structure and device, applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of inconsistent reliability, poor reliability of fatwire structures with a larger pitch, and the liner is too thin to sustain all the current density of fatwir

Inactive Publication Date: 2007-09-06
AURIGA INNOVATIONS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0002] The present invention relates to an interconnect structure, e.g., a damascene interconnect, for integrated circuits with improved reliability and improved electromigration properties.

Problems solved by technology

However, with regard to electromigration effects, reliability of fatwire structures with a larger pitch becomes worse than in a thin wire structure.
This inconsistent reliability is due to the fatwire structure.
Moreover, even when the via contacts the sidewall liner, the liner is too thin to sustain all the current density of the fatwire.

Method used

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Embodiment Construction

[0015] The invention relates to a process for forming a wire from a conventional dual damascene line. According to the invention, the formed fatwire eliminates the line opens and improves reliability (electromigration) by providing a longer lifetime and tighter sigma than conventional fatwire structures.

[0016] According to the invention, the fatwire structure includes a thin redundant liner in the fatwire interconnect structure to isolate voids from underneath the via and to prevent such voids from propagating upward above the redundant liner. As a result, upward propagation of voids into the upper part of the metal layer is prevented.

[0017] The via opening is etched through the redundant liner, which increases the mechanical strength of the interconnect and essentially eliminates any thermal cycle and / or stress migration effects. Further, the depth of the via improves performance against the electromigration effects by increasing contact surface around the via.

[0018] The present...

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Abstract

Device with a damascene interconnect for integrated circuits with improved reliability and improved electromigration properties. The device including a dual damascene line having a metal line and a via, and a redundant liner arranged to divide the metal line.

Description

CROSS-REFERENCE TO RELATED APPLICATION [0001] The present application is a divisional of U.S. patent application Ser. No. 11 / 164,223 filed Nov. 15, 2005, the disclosure of which is expressly incorporated by reference herein in its entirety.FIELD OF THE INVENTION [0002] The present invention relates to an interconnect structure, e.g., a damascene interconnect, for integrated circuits with improved reliability and improved electromigration properties. BACKGROUND DESCRIPTION [0003] According to the known art, “fatwire” structure is a wiring layout laid out with a metal line having thicker height and wider width, e.g., thickness and pitch of 2×, 4×, 6×, etc. of a thin wire, minimum ground rules dimensions. However, with regard to electromigration effects, reliability of fatwire structures with a larger pitch becomes worse than in a thin wire structure. This inconsistent reliability is due to the fatwire structure. In this regard, fatwire failure generally occurs at the top of the metal ...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L23/52
CPCH01L21/76802H01L21/76805H01L21/76847H01L21/76877H01L21/76883H01L2924/0002H01L23/53238H01L23/53295H01L2924/00
InventorAGARWALA, BIRENDRA N.NGUYEN, DU BINHRATHORE, HAZARA SINGH
OwnerAURIGA INNOVATIONS INC