Method for manufacturing three dimensional stacked semiconductor structure and structure manufactured by the same
a three-dimensional stacked semiconductor and manufacturing method technology, applied in the direction of semiconductor devices, basic electric elements, electrical apparatus, etc., can solve the problems of easy bended or collapsed problems, and the typical 3d memory structure suffers from several problems, and achieves reliable electrical characteristics.
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[0020]In the embodiments of the present disclosure, a method of manufacturing a three-dimensional (3D) stacked semiconductor structure and a structure manufactured by the same are provided. According to the method of the embodiment, a multi-layer comprising a plurality of first and second dielectric layers arranged alternately are formed on a substrate, followed by patterning the multi-layer to form a plurality of first patterned stacks and spaces between the first patterned stacks. According to the embodiment, the first dielectric layers are compressive layers exhibiting compressive stress, and the second dielectric layers are tensile layers exhibiting tensile stress. Parts of the second dielectric layers of one of the first patterned stacks are then replaced by conductors. The 3D stacked semiconductor structure manufactured by the method of the embodiment has plural multi-layered patterned stacks and spaces between the multi-layered patterned stacks, and each patterned stack compr...
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