Silicone-modified epoxy resin composition and semiconductor device

a technology of epoxy resin and semiconductor devices, which is applied in the direction of semiconductor devices, basic electric elements, electrical apparatus, etc., can solve the problems of reducing heat resistance, affecting reliability, and difficult to secure space distances and creepage distances, so as to reduce modulus, suppress cracking or separation risk, and enhance tracking resistance
US20200392340A1Inactive Publication Date: 2020-12-17SHIN ETSU CHEM CO LTD
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Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
SHIN ETSU CHEM CO LTD
Publication Date
2020-12-17
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a resin composition comprising a specific silicone-modified epoxy resin, a specific silicone-modified phenolic resin, black pigment, and an inorganic filler. The invention also provides a resin composition comprising a specific cyanate ester compound, a specific silicone-modified epoxy resin, and a specific phenol compound and / or silicone-modified phenolic resin.
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Description

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application is a Divisional of copending application Ser. No. 15 / 971,019 filed on May 4, 2018, which claims priority under 35 U.S.C. § 119(a) on Patent Application Nos. 2017-099972 and 2017-100000 filed in Japan on May 19, 2017 and May 19, 2017, respectively, the entire contents of which are hereby incorporated by reference.TECHNICAL FIELD

[0002] This invention relates to a silicone-modified epoxy resin composition having improved tracking resistance, a silicone-modified epoxy resin composition having a reduced modulus and the suppressed risk of cracks and separation while maintaining thermal stability and temperature / humidity resistance, and a semiconductor device encapsulated with a cured product of the resin composition.BACKGROUND ART

[0003] The current mainstream of semiconductor devices including diodes, transistors, ICs, and LSIs is of the resin encapsulation type. Epoxy resins have superior moldability, adhesion, electrical propert...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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