Non-volatile semiconductor memory device and multi-block erase method thereof

Abstract

A non-volatile semiconductor memory device includes memory blocks and an erase controller configured to control a multi-block erase operation where at least two of the memory blocks are simultaneously erased. According to some embodiments, after selecting and simultaneously erasing the selected memory blocks, an erase verify operation for each of the erased memory blocks is performed according to an externally provided erase verify command and block address. According to some embodiments, if a suspend command is received by the memory device while selected memory blocks are being erased, the erase operation ceases and another operation, such as a read operation, begins. When a resume command is received by the memory device, the erase operation resumes. Other embodiments are described and claimed.

Description

CROSS REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority from Korean Patent Application No. 2004-32271, filed on 7 May 2004, and from Korean Patent Application No. 2004-73030, filed on 13 Sep. 2004, the contents of which are hereby incorporated by reference in its entirety for all purposes.BACKGROUND OF THE INVENTION[0002]1. Field of the Invention[0003]This disclosure relates to nonvolatile storage devices, and, in particular, to flash memory devices with an improved program algorithm, which is able to reduce program time.[0004]2. Description of the Related Art[0005]Semiconductor memories are usually considered to be the most vital microelectronic component of digital logic system design, such as computers and microprocessor-based applications ranging from satellites to consumer electronics. Therefore, advances in the fabrication of semiconductor memories including process enhancements and technology developments through the scaling for higher densities and fast...

AI Technical Summary

Benefits of technology

The invention provides a non-volatile semiconductor memory device and its erase method that can improve the erase verify operation in a multi-block erase method. It can also change the erase time in a multi-block erase method. Additionally, it can suspend a multi-block erase operation and perform a read / write operation.

Problems solved by technology

In non-volatile memories, however, MROM, PROM, and EPROM are not free to be erased and written to by a system itself, so that it is not easy for general users to update stored contents.

The time required to erase memory blocks is a factor that limits the performance of a system that includes flash memory devices as well as a factor that limits the performance of the flash memory device itself.

Accordingly, the erase verify operation of respective erased memory blocks is a factor that limits the performance and area of a flash memory device.

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