Substrate for ink jet head with TaCr alloy protective layer, ink jet head utilizing the same and producing method therefor
a technology of ink jet head and protective layer, which is applied in printing and other directions, can solve the problems of peeling phenomenon, inability to generate bubbles, corrosion of wirings, etc., and achieve the effects of high precision, excellent adhesion and high reliability
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example 1
[0068]In order to simply evaluate an adhesion between a Ta88Cr12 film 107 (representing a film with a composition ratio of Ta 88 at. % and Cr 12 at. %; hereinafter composition being represented in a similar manner) of the present example and an organic adhesion promoting film (polyether amide resin) 307, a tape peeling test was conducted after a pressure cooker test (PCT).
[0069]The tape peeling test was conducted in the following manner. On a silicon wafer bearing the upper protective layer 107, an organic adhesion promoting film (polyether amide resin) 307 was formed with a thickness of 2 μm, and squares of 1×1 mm in a checkerboard pattern of 10 (longitudinal)×10 (lateral)=100 squares were formed with a cutter knife on the organic adhesion promoting film 307. Then a PCT was conducted by immersion in an alkaline ink under conditions of 121° C. and 2.0265×105 Pa (2 atm.) for 10 hours. Thereafter, an adhesive tape was applied on the squares in the checkerboard pattern and peeled, and ...
examples 2 to 7
[0072]A method similar to that in Example 1 was employed to evaluate an adhesion of Ta100-xCrx films of different compositions after PCT, and the obtained results are shown in Table 2.
example 8
[0079]In the present example, a Si substrate or a Si substrate in which a driving IC is formed is used for a sample for evaluating the ink jet properties. In case of a Si substrate, an SiO2 heat accumulation layer 102 (FIG. 1) of a thickness of 1.8 μm is formed by thermal oxidation, sputtering or CVD, and, a Si substrate already having an IC is also subjected to a formation of an SiO2 heat accumulation layer in a preparation process.
[0080]Then an SiO2 interlayer insulation film 103 of a thickness of 1.2 μm was formed by sputtering or CVD. Then a Ta40Si21N39 heat-generating resistor layer 104 of a thickness of 50 nm was formed by reactive sputtering employing a Ta—Si target. This operation was conducted at a substrate temperature of 200° C. Then an Al film for the metal wiring 105 was formed with a thickness of 200 nm by sputtering.
[0081]Then a patterning was executed by a photolithographic process to form a heat acting portion 108 of 26×26 μm in which the Al film was eliminated. The...
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