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STRAM with composite free magnetic element

a free magnetic element and free magnetic technology, applied in the field of stram with free magnetic element, can solve the problems of limited endurance, slow access speed, integration difficulty, flash memory (nand or nor) also faces significant scaling problems,

Inactive Publication Date: 2011-10-25
SEAGATE TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Current technology like flash memory has several drawbacks such as slow access speed, limited endurance, and the integration difficulty.
Flash memory (NAND or NOR) also faces significant scaling problems.
As the MTJ size shrinks, the switching magnetic field amplitude increases and the switching variation becomes more severe.
Thus, the amount of current required to switch the STRAM cell between resistance data states is large.

Method used

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  • STRAM with composite free magnetic element
  • STRAM with composite free magnetic element
  • STRAM with composite free magnetic element

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Embodiment Construction

[0020]In the following description, reference is made to the accompanying set of drawings that form a part hereof and in which are shown by way of illustration several specific embodiments. It is to be understood that other embodiments are contemplated and may be made without departing from the scope or spirit of the present disclosure. The following detailed description, therefore, is not to be taken in a limiting sense. The definitions provided herein are to facilitate understanding of certain terms used frequently herein and are not meant to limit the scope of the present disclosure.

[0021]Unless otherwise indicated, all numbers expressing feature sizes, amounts, and physical properties used in the specification and claims are to be understood as being modified in all instances by the term “about.” Accordingly, unless indicated to the contrary, the numerical parameters set forth in the foregoing specification and attached claims are approximations that can vary depending upon the ...

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Abstract

Spin-transfer torque memory includes a composite free magnetic element, a reference magnetic element having a magnetization orientation that is pinned in a reference direction, and an electrically insulating and non-magnetic tunneling barrier layer separating the composite free magnetic element from the magnetic reference element. The free magnetic element includes a hard magnetic layer exchanged coupled to a soft magnetic layer. The composite free magnetic element has a magnetization orientation that can change direction due to spin-torque transfer when a write current passes through the spin-transfer torque memory unit.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims the benefit of U.S. Provisional Application No. 61 / 111,351 filed Nov. 5, 2008, the contents of which is hereby incorporated by reference in its entirety.BACKGROUND[0002]Fast growth of the pervasive computing and handheld / communication industry has generated exploding demand for high capacity nonvolatile solid-state data storage devices. Current technology like flash memory has several drawbacks such as slow access speed, limited endurance, and the integration difficulty. Flash memory (NAND or NOR) also faces significant scaling problems.[0003]Resistive sense memories are promising candidates for future nonvolatile and universal memory by storing data bits as either a high or low resistance state. One such memory, MRAM, features non-volatility, fast writing / reading speed, almost unlimited programming endurance and zero standby power. The basic component of MRAM is a magnetic tunneling junction (MTJ). MRAM switches t...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): G11C11/00
CPCB82Y10/00B82Y25/00G11C11/16H01F10/3254H01F10/329H01L43/08G11C11/1675H01F10/3268H01F10/3286G11C11/161H10N50/10
Inventor ZHENG, YUANKAIDIMITROV, DIMITAR V.WANG, DEXINXI, HAIWENGAO, KAIZHONGHEINONEN, OLLEZHU, WENZHONG
Owner SEAGATE TECH LLC