Method for manufacturing semiconductor device
a manufacturing method and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device details, electrical devices, etc., can solve the problems of poor appearance, degraded device reliability, and not fully insulated from each other, and achieve the effect of increasing the dielectric strength of the devi
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first embodiment
[0029]A first embodiment of the present invention relates to a method for manufacturing a semiconductor device in which Al electrodes are covered with a semi-insulating film in such a manner as to prevent chemical reaction between the Al electrodes and the semi-insulating film. In the following description of preferred embodiments, like numerals represent like or corresponding parts, or parts of like materials, and these parts may be described only once.
[0030]FIG. 1 is a cross-sectional view of a semiconductor device manufactured by the method of the present embodiment. This semiconductor device will now be described with reference to FIG. 1. The semiconductor device, 10, includes a dielectric strength enhancing region formed around a device region, and also includes an N-layer 11 which forms a conductivity modulation region, and a plurality of P-type regions, or guard rings, 12 formed in the surface of the N-layer 11. Al electrodes 14 are provided on the respective P-type regions 1...
second embodiment
[0054]A second embodiment of the present invention relates to a method for manufacturing a semiconductor device which is similar to that described in connection with the first embodiment but which is further adapted to ensure proper wire bonding. This method also has the advantages described in connection with the first embodiment.
[0055]FIGS. 13 and 14 show a semiconductor device manufactured by the method of the present embodiment. Specifically, FIG. 14 is a cross-sectional view primarily showing its device region, and FIG. 13 is a cross-sectional view of a peripheral region (or dielectric strength enhancing region) formed around the device region and including P-type regions (or guard rings) 12. The device region and the peripheral region are formed in the same substrate but separately shown in FIGS. 14 and 13, respectively, for convenience of explanation.
[0056]First, the dielectric strength enhancing region of the present embodiment will be described with reference to FIG. 13. Th...
third embodiment
[0062]A third embodiment of the present invention relates to a method for manufacturing a semiconductor device which is similar to that described in connection with the first embodiment but which includes aluminum oxide films, such as Al2O3 or AlO3, serving as interlayer films.
[0063]FIG. 15 is a cross-sectional view of a semiconductor device manufactured by the method of the present embodiment. This semiconductor device is similar to that shown in FIG. 1 except that it includes interlayer films 90 instead of the interlayer films 16. These interlayer films 90 are aluminum oxide such as Al2O3 or AlO3, as described above.
[0064]FIG. 16 is a flowchart illustrating the method of the present embodiment for manufacturing a semiconductor device. First, an Al electrode layer 13 is formed at step 100. Next, the Al electrode layer is partially etched away at step 200. Specifically, the portions of the Al electrode layer 13 which are not on the P-type regions 12 are etched away by a known techni...
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Abstract
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