Tungsten film forming method

Abstract

In a tungsten film forming method, a substrate having a recess is provided in a processing chamber, and a first tungsten film is formed on the substrate to fill the recess with a tungsten by simultaneously or alternately supplying WCl6 gas as a tungsten source and a reducing gas under a depressurized atmosphere of the processing chamber, and by reacting the WCl6 gas with the reducing gas while heating the substrate. Then, an opening is formed in the tungsten filled in the recess by supplying WCl6 gas into the processing chamber and etching an upper portion of the tungsten. Thereafter, a second tungsten film is formed on the substrate having the opening by simultaneously or alternately supplying the WCl6 gas and the reducing gas into the processing chamber, and by reacting the WCl6 gas with the reducing gas while heating the substrate.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This application claims priority to Japanese Patent Application No. 2014-069008 filed on Mar. 28, 2014, the entire contents of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present invention relates to a tungsten film forming method for filling a tungsten film in a hole formed on a substrate.BACKGROUND OF THE INVENTION[0003]In a semiconductor device manufacturing process, a tungsten film is used for filling a recess (via hole) between wirings or a substrate contact recess (contact hole) formed at a semiconductor wafer (hereinafter, simply referred to as “wafer”) that is an object to be processed.[0004]As for a tungsten film forming method, a physical vapor deposition (PVD) method has been conventionally used. However, tungsten W is a high melting point metal and it is difficult in PVD method to deal with a high coverage required along with a recent trend toward miniaturization of devices. Therefore, a chemical...

AI Technical Summary

Benefits of technology

The present invention provides a method for simply and quickly forming a tungsten film with no negative effects on the underlying base. Additionally, this method can prevent the formation of voids or seams in the final product.

Problems solved by technology

However, tungsten W is a high melting point metal and it is difficult in PVD method to deal with a high coverage required along with a recent trend toward miniaturization of devices.

However, along with a recent trend toward a high aspect ratio of a hole, a central portion of the hole may be swollen due to bowing.

The generated void or seam is exposed by CMP (chemical mechanical planarization) after the film formation, which inflicts adverse effect on semiconductor performance.

However, the technique disclosed in Japanese Patent Application Publication No. 2010-153852 is disadvantageous in that the processing is complicated and a throughput is decreased, because a plasma is used for the etching process and a chamber for film formation and a chamber for etching need to be separately provided.

However, it is disadvantageous in that the etching property of the WF6 gas is insufficient to make it difficult to reliably perform the etching.

Further, such a technique is not enough to deal with miniaturization of devices, because fluorine contained in WF6 inflicts damage to a base film when barrier metal becomes thin along with the miniaturization of devices.

Thus, it is disadvantageous in that the processing is complicated and it is difficult to control the processing.

However, the technique disclosed in Japanese Patent Application Publication No. 2013-32575 is disadvantageous in that a throughput is decreased in the case of performing the film formation and the etching in the same processing chamber, because a temperature suitable for formation of a tungsten film and a temperature suitable for etching are different.

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