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Manufacturing method for solid electrolytic capacitor

A technology of solid electrolysis and manufacturing method, which is applied in the direction of solid electrolytic capacitors, electrolytic capacitors, capacitors, etc., and can solve problems such as enlargement and deterioration of high-frequency response characteristics

Inactive Publication Date: 2007-11-21
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In this way, similar to semiconductor components, in the solid electrolytic capacitors mounted on the upper surface of the circuit board, the ESR and equivalent series inductance (hereinafter referred to as ESL) characteristics that constitute the actual circuit state are different due to the length of the terminals and the length of the wiring. become larger, causing problems such as deterioration of high-frequency response characteristics

Method used

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  • Manufacturing method for solid electrolytic capacitor
  • Manufacturing method for solid electrolytic capacitor
  • Manufacturing method for solid electrolytic capacitor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0042]Embodiment 1 of the present invention will be described with reference to FIGS. 1 to 14 . 1 is a perspective view of a solid electrolytic capacitor in Embodiment 1 of the present invention, FIG. 2 is a cross-sectional view of the solid electrolytic capacitor in Embodiment 1 of the present invention, and FIG. 3 is an enlarged cross-sectional view of main parts thereof.

[0043] First, the structure of the chip capacitor element 1 of the present invention will be described in order of manufacturing steps. One side of the aluminum foil 2 is etched, and the resist film 4 is formed on the porous portion of the multiplied aluminum foil 2 (hereinafter referred to as the porous portion 3 ). Next, a through hole 5 is formed at a predetermined position of the aluminum foil 2, and an insulating film 6 is formed on the surface of the aluminum foil 2 that is not made porous (hereinafter referred to as a flat surface) and the inner wall of the through hole 5, and the resist film 4 is ...

Embodiment approach 2

[0062] Next, Embodiment 2 of the present invention will be described with reference to FIGS. 15 to 16 . 15 to 16 are main process diagrams for explaining the manufacturing process of the solid electrolytic capacitor in Embodiment 2 of the present invention.

[0063] After the resist film 4 is formed on the porous portion 3 of the aluminum foil 2 made porous on one side by etching, the through hole 5 is formed at a predetermined position. Next, an insulating film 6 is formed on the non-porous surface of the aluminum foil 2 (hereinafter referred to as a flat surface) and the inner wall of the through hole 5, and then, after removing the resist film 4, a dielectric film is formed on the porous portion 3. Body capsule7. The above steps are the same as the method of Embodiment 1.

[0064] Next, when the solid electrolyte layer 8 is provided on the dielectric film 7, the solid electrolyte layer 8 may be formed on the insulating film 6 on the flat surface of the aluminum foil 2 whe...

Embodiment approach 3

[0070] Embodiment 3 of the present invention will be specifically described below with reference to FIGS. 17 to 18 . 17 to 18 are main process diagrams for explaining the manufacturing process of the solid electrolytic capacitor in Embodiment 3 of the present invention.

[0071] After the resist film 4 is formed on the porous portion 3 of the aluminum foil 2 multiplied on one side by etching, a through hole 5 is formed at a predetermined position. Next, an insulating film 6 is formed on the non-porous surface of the aluminum foil 2 (hereinafter referred to as a flat surface) and the inner wall of the through hole 5, and after removing the resist film 4, a dielectric film 7 is formed on the porous portion 3. . The above steps are the same as those in Embodiment 1.

[0072] Next, the solid electrolyte layer 8 is provided on the dielectric film 7, and the solid electrolyte layer 8 may be formed on the insulating film 6 on the flat surface of the aluminum foil 2 when the via hol...

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Abstract

A method of manufacturing the solid electrolytic capacitors that can be directly connected to semiconductor components and have a faster response to a high frequency as well as a larger capacitance includes: a dielectric forming stage where a valve metal sheet (2) is made porous and dielectric coating (7) is provided on the porous face (3); an element forming stage where solid electrolytic layer (8) and collector layer (10) are formed on the dielectric coating (7); and a terminal forming stage where connecting terminal (16) to an external electrode is formed. The element forming stage includes the steps of: forming solid electrolytic layer (8); forming through-hole electrode (9) in through-hole (5) that is prepared on valve metal sheet (2); and forming collector (10) on solid electrolytic layer (8).

Description

technical field [0001] The invention relates to a method for manufacturing solid electrolytic capacitors on various electronic devices. Background technique [0002] If the composition of the prior art solid electrolytic capacitor is described in the order of the manufacturing process, it is composed of the following: (1) one side or the middle of the thickness direction of the valve metal sheet made porous such as aluminum or titanium The core portion is used as an electrode, and a dielectric coating is formed on the surface of the porous portion of the valve metal sheet. (2) A dielectric layer is formed on the surface of the dielectric film. (3) A capacitor element is constituted by providing a metal electrode layer on the current collector layer. (4) Laminated capacitor element. (5) The electrode portions or electrode layers of the stacked capacitor elements are collectively connected to external terminals. (6) Finally, an exterior is formed to expose the external ter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/04H01G9/012H01G9/00H01G9/028H01G9/15
CPCH01G9/15H01G9/012
Inventor 藤井达雄中野慎御堂勇治三木胜政木村凉
Owner PANASONIC CORP