Semiconductor device and manufacturing method thereof

Abstract

A semiconductor device of the present invention includes: a substrate having a first region and second regions; dicing grooves which separate the first region from the second regions; step parts which are provided on surfaces of the first region and the second regions of the substrate adjacent to the dicing grooves, and expose the substrate; and a resin layer which integrally supports the substrate on the surfaces of the first region and the second regions of the substrate including the step parts, thereby, adhesion of the resin layer to the step parts is improved.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, in particular to a wafer-level chip packaged semiconductor device and a manufacturing method thereof. Background technique [0002] Generally, a semiconductor device having transistor elements formed on a silicon substrate uses Figure 17 structure shown. 1 is a silicon substrate, 2 is an island-shaped portion such as a heat sink on which the silicon substrate 1 is mounted, 3 is a lead terminal, and 4 is a sealing resin. [0003] Such as Figure 17 As shown, the silicon substrate 1 formed with the transistor element is fixedly installed on the island-shaped part 2 such as a copper substrate heat dissipation plate through solder 5 such as solder, and the base electrode and the emitter electrode of the transistor element are arranged on the silicon substrate by bonding wires. The lead terminals 3 around the bottom 1 are electrically connected. Lead terminals con...

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Problems solved by technology

[0011] However, in the semiconductor device of the above-mentioned chip size package, since the semiconductor substrate 60 is separated by the slit hole 80, it is necessary to support and fix it on the same plane by the resin layer 78, but since it is bonded to the insulating film 74, and the Uniform thickness, so there is a big practical problem that it is difficult to obtain sufficient strength

[0012] In addition, since the slit hole 80 is formed from the back surface of the semiconductor substrate 80, there is also a problem that there is no mark as a reference, and it is difficult to perform alignment when forming the slit hole.

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