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Substrate of thin-film transistor

A technology of thin-film transistors and substrates, which is applied in the field of gates or gate lines, can solve problems such as short-circuit film coverage, and achieve the effect of preventing disconnection or breakage and preventing short-circuit phenomena

Active Publication Date: 2009-06-10
INNOCOM TECH (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem that the short circuit between the gate / gate line of the thin film transistor substrate is easy to occur or the coverage of the subsequent film is poor, it is necessary to provide a method that can reduce the short circuit between the gate / gate line and can Thin-film transistor substrate with improved subsequent thin-film coverage

Method used

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  • Substrate of thin-film transistor
  • Substrate of thin-film transistor
  • Substrate of thin-film transistor

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Embodiment Construction

[0015] Please refer to FIG. 4 , which is a schematic partial cross-sectional view of the thin film transistor substrate of the present invention. The TFT substrate 200 includes a glass substrate 210 , a gate / gate line 220 on the glass substrate 210 and an insulating layer 230 on the glass substrate 210 and the gate / gate line 220 . The gate / gate line 220 is a multilayer metal structure including a barrier layer 222 (Barrier Layer), a conductive layer 224 and an adhesion layer 226 (Glue Layer).

[0016] Wherein, the material of the conductive layer 224 is copper metal material, and its thickness is 200˜400 nm. The thickness of the barrier layer 222 is 5-30nm, which is a sandwich structure (Sandwich Structure), and a copper metal film 223 is sandwiched by two barrier metal films 221. The material of the barrier metal film 221 can be titanium nitride (TiN) or Tantalum Nitride (TaN). The adhesion layer 226 has a thickness of 5-30nm, and it is a sandwich structure. A copper metal ...

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Abstract

The invention provides a thin film transistor substrate, comprising a glass substrate and a gate / gate line arranged on the glass substrate; the gate / gate line is a multi-layer metal structure which is provided in turn with an adhesive layer, a conductive layer and a barrier layer, wherein, the adhesive layer and the barrier layer both have a sandwich structure in which the middle layer is a thin film layer made of the same material as the conductive layer. The thin film transistor substrate of the invention can prevent short circuit and can improve the spreadability of subsequent thin film.

Description

technical field [0001] The present invention relates to a thin film transistor substrate, in particular to a gate or a gate line (Gate Line) of a thin film transistor substrate. Background technique [0002] At present, liquid crystal displays are gradually replacing traditional cathode ray tube (Cathode Ray Tube, CRT) displays used in calculators, and because liquid crystal displays are light, thin, and small, they are very suitable for use in desktop computers, Laptop computers, personal digital assistants (Personal Digital Assistant, PDA), portable phones, televisions and a variety of office automation and audio-visual equipment. The liquid crystal panel is its main component, which generally includes a thin film transistor substrate, a color filter substrate and a liquid crystal layer sandwiched between the thin film transistor substrate and the color filter substrate. [0003] see figure 1 , is a partial cross-sectional schematic diagram of a conventional TFT substrat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/532H01L29/49H01L27/12H01L29/786
Inventor 颜硕廷
Owner INNOCOM TECH (SHENZHEN) CO LTD