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Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell

A solar cell, silicon-based thin film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as increasing the complexity of the operation process and prolonging the growth cycle

Inactive Publication Date: 2009-07-29
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Its disadvantages are: each additional isolation room will cost at least 150,000 to 200,000 yuan, and the purpose is only to reduce possible impurity pollution; 2. Extend the growth cycle; 3. Increase the complexity of the operation process

Method used

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  • Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell
  • Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell
  • Growth silicon based thin film and PECVD equipment for high-efficiency silicon based thin-film solar cell

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Embodiment Construction

[0026] The present invention will be further described below in conjunction with the drawings and specific embodiments.

[0027] Such as figure 2 As shown, the present invention is composed of a deposition chamber, a gas path control system, an electric control system, and a vacuum unit. The electric control system controls the deposition chamber, gas path control system, and vacuum unit.

[0028] The connection between the deposition chamber and the vacuum unit is as follows image 3 Shown; the condensation filter 4 is respectively connected with the growth chamber 1, the inlet and outlet chamber 2, the mechanical pump 3, and the exhaust gas pipeline. The mechanical pump 3 is connected with the waste gas treatment device 5 and the condensing filter 4 by a stainless steel bellows with a diameter of 50 mm. image 3 The leftmost mechanical pump in the middle is used for exhaust gas discharge. It is connected to the condensing filter 4 through a stainless steel bellows with a diamet...

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Abstract

A PECVD device for growing silicon-based thin films and high-efficiency silicon-based thin-film solar cells, including a deposition chamber, a gas path control system, an electric control system, and a vacuum unit. The deposition chamber is composed of a growth chamber (1) located in the middle of the deposition chamber and film entry and exit chambers (2) located on both sides of the growth chamber (1). The entry and exit film chamber (2) is equipped with a movable door that can be opened and closed manually. The entry and exit chamber (2) is equipped with an automatic loading and unloading rack for multiple samples. The growth chamber (1) is equipped with four sets of parallel-plate capacitive electrodes for deposition. Each set of parallel-plate capacitive electrodes is composed of two symmetrically arranged upper and lower electrode plates. There is a vertical installation between each set of parallel-plate capacitive electrodes. bezel. The vacuum unit consists of a mechanical pump (3), a condensation filter (4), and a waste gas treatment device (5). The PLC controller of the electronic control system controls the growth process of silicon-based thin film and silicon-based thin film solar cells. The heterogeneity of the silicon-based thin film prepared by the invention is less than 3% (tested and calculated by infrared transmission spectrum method), and the conversion efficiency of the silicon-based thin film solar cell is greater than 9% (test light source: AM1.5; 1000W / M2).

Description

Technical field [0001] The invention relates to equipment for preparing silicon-based thin-film materials and silicon-based thin-film solar cells, in particular to equipment for preparing silicon-based thin-film materials and high-efficiency silicon-based thin-film solar cells by adopting a PECVD method. Background technique [0002] At present, the world is facing energy shortages and environmental degradation, and the development of renewable energy is greatly accelerated. Crystalline silicon solar cells are restricted by the supply of raw materials, making silicon thin-film solar cells more important. However, the current high cost of R&D and production equipment for preparing silicon thin-film solar cells has severely restricted its development speed. There is an urgent need for low-cost silicon thin film battery R&D and production equipment in the market. [0003] Chinese patent CN2404215 provides a PECVD device for making amorphous silicon thin-film solar cells. Such as fig...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/50C23C16/30C23C16/52
Inventor 刁宏伟王文静廖显伯赵雷
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI