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Non-volatile internal memory programming method

A technology of non-volatile memory and programming method, which is applied in the direction of static memory, digital memory information, information storage, etc., can solve the problem that the speed of programming method is difficult to increase, and achieve the effect of solving misjudgment of data value and high programming rate

Active Publication Date: 2009-09-23
MACRONIX INT CO LTD
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Problems solved by technology

[0006] Another object of the present invention is to propose a programming method for non-volatile memory, to solve the problem that the speed of known programming methods is difficult to improve

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  • Non-volatile internal memory programming method

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Embodiment Construction

[0025] In the following, although the programming method of the nonvolatile memory of the present invention is an example of the programming method of the multi-level cell (MLC) nonvolatile memory and the multi-time programmable (MTP) nonvolatile memory, according to the spirit of the present invention Therefore, the present invention can be applied to simpler one-time programming (OTP) nonvolatile memories and more complicated multi-level, multiple times programmable nonvolatile memories.

[0026] image 3 Shown is a flowchart of a programming method for a multi-level cell (MLC) nonvolatile memory according to a preferred embodiment of the present invention. At the beginning of programming (step 310), the initial value of the storage state pointer i is 1. Next, the i reference level is selected according to the level distribution of the memory cells in the i storage state (step 320 ), and its value is higher than the highest level of the memory cells in the i storage state. ...

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Abstract

The present invention uses a fixed reference level when programming the non-volatile memory, but has the problem that the programming rate is difficult to increase. Therefore, the present invention proposes a programming method for a non-volatile memory, which avoids the problems of over-programming and narrowing margins between storage states without using a fixed reference level. The programming method is to select a reference level according to the level distribution of the storage unit in the current storage state in the nonvolatile memory, and then program the predetermined storage unit to the next storage state according to the reference level. Wherein, the value range of the reference level is between the highest level of the storage unit in the current storage state and the lowest level distribution of the storage unit in the next storage state.

Description

technical field [0001] The present invention relates to a method for operating a memory device, and in particular to a method for programming a non-volatile memory. Background technique [0002] Since the programmable non-volatile memory can be used to improve the flexibility of the circuit design, and has the advantages of light weight and the ability to save data when there is no power supply, its related applications are becoming more and more extensive. In the known programming methods of non-volatile memory, a fixed reference level (reference level) is used to distinguish the data storage state of the memory cell (hereinafter referred to as the storage state), and the reference level may be a current or an initial voltage. (threshold voltage, V T ) of the reference level. [0003] It is known that a fixed reference level is used when programming a one-time programmable (OTP) nonvolatile memory that stores 1 bit (1-bit per cell) in each memory cell; level cell (MLC) m...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56
Inventor 叶致锴蔡文哲
Owner MACRONIX INT CO LTD
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