Surface form measuring apparatus and method, and stress measuring apparatus and stress measuring method
A surface shape and stress measurement technology, applied in the direction of measuring devices, measuring force, and optical devices, can solve the problems of increased stress measurement time and complicated device structure.
Inactive Publication Date: 2009-10-14
DAINIPPON SCREEN MTG CO LTD
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Therefore, the structure of the device is complicated and the time for stress measurement increases
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[0025] figure 1 It is a figure which shows the structure of the stress measurement apparatus 1 of the 1st Embodiment of this invention. The stress measuring device 1 is a device for measuring the in-film stress formed on the main surface of a semiconductor substrate 9 (hereinafter simply referred to as "substrate 9"). The film may be a single-layer film or a multilayer film. In this embodiment, patterns such as wiring patterns are not formed on the substrate 9.
[0026] Such as figure 1 As shown, the stress measurement device 1 includes: a stage 2, which serves as a substrate holding portion for holding a substrate 9; and a stage moving mechanism 21, which moves the stage 2 along figure 1 Move in the X and Y directions; the stage lifting mechanism 24, which moves the stage 2 along figure 1 In the Z direction up and down; Ellipsometer 3, which obtains information for polarization analysis (ellipsometry) of the film on the substrate 9; Optical interference unit 4, which obtains...
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In a stress measuring apparatus (1), reflected light of light emitted to a substrate (9) through an objective lens (457) is received by a light shielding pattern imaging part (43), to acquire an image of a light shielding pattern (453a) positioned at an aperture stop part (453) of an optical system (45). In a control part (5), gradient vectors of the substrate (9) in a plurality of gradient vector measurement areas and surface form of the substrate (9) are obtained on the basis of outputs of the light shielding pattern imaging part (43), and a stress in a film formed on the substrate (9) is obtained on the basis of a radius of curvature obtained based on the surface form, a film thickness, and a thickness of the substrate (9). In the stress measuring apparatus (1), since light directed through the objective lens (457) becomes approximately parallel rays of light on the substrate (9), measurement can be performed without focusing on each gradient vector measurement area on the substrate (9) and the surface form of the substrate (9) can be obtained easily and rapidly. Consequently, it is possible to obtain a stress in the film on the substrate (9) easily and rapidly.
Description
Technical field [0001] The present invention relates to a technique for measuring the surface shape of an object, and also relates to a technique for measuring the internal film stress on the object by using the measured surface shape. Background technique [0002] So far, in the manufacture of semiconductor elements, various processes such as film deposition or annealing process are usually performed on a semiconductor substrate (hereinafter referred to as a "substrate"). According to these treatments, residual stress is generated in the thin film on the substrate. In recent years, with the demand for high-definition semiconductor devices, the influence of this residual stress on the quality of semiconductor devices has become increasingly prominent, and there is a need to improve the measurement of stress in the thin film. [0003] As one of the devices for measuring the internal stress of a thin film in a non-contact manner, JP 2000-9553 (Document 1) discloses a thin film eval...
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IPC IPC(8): H01L21/66G01B11/24G01L1/00
CPCG01B11/0625G01B11/25
Inventor 赤鹿久美子堀江正浩
Owner DAINIPPON SCREEN MTG CO LTD