High voltage PMOS transistor and method of manufacture thereof
A manufacturing method and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem that high-voltage PMOS transistors cannot simultaneously obtain high breakdown voltage and high saturation current
Active Publication Date: 2009-10-21
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0003] The technical problem to be solved by the present invention is to provide a method for manufacturing a high-voltage PMOS transistor, which can solve the contradiction between high breakdown voltage and high saturation current that cannot be simultaneously obtained for high-voltage PMOS transistors
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Embodiment Construction
[0027] The manufacture method of high-voltage PMOS transistor described in the present invention is as follows:
[0028] Such as Figure 2 to Figure 10 It is a cross-sectional structure diagram of a method for manufacturing a high-voltage RMOS transistor according to the present invention, specifically, Figure 10 It is a cross-sectional structure diagram of a high-voltage PMOS transistor manufactured according to the method for manufacturing a high-voltage PMOS transistor of the present invention. refer to Figure 2 to Figure 10 , the concrete steps of the manufacturing method of high-voltage PMOS transistor described in the present invention are as follows:
[0029] First, if figure 2 As shown, the P-type buried channel ion implantation is performed on the entire surface of the high-voltage N-well substrate;
[0030] Then, if image 3 As shown, the lightly doped P-type diffusion region ion implantation is carried out on the high-voltage N-well substrate to form a P-typ...
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The invention discloses a high-voltage PMOS transistor and a manufacturing method thereof, which can solve the contradiction between the breakdown voltage and the saturation current of the high-voltage PMOS transistor that cannot obtain higher performance at the same time. The manufacturing method includes: performing high-voltage N well and P-type buried trench ion implantation; performing lightly doped P-type diffusion region ion implantation; performing gate oxide layer deposition; performing N-type doped polysilicon gate deposition; Polysilicon gate and gate oxide layer etching; self-aligned lightly doped source ion implantation; sidewall deposition and etching; use photoresist to cover N-type polysilicon gate and P-type diffusion region, and perform source-drain ion Implant to form P-type polysilicon gate and source and drain; remove photoresist. The high-voltage PMOS transistor includes: a polysilicon gate, which is composed of an N-type polysilicon gate and a P-type polysilicon gate each occupying a certain length ratio.
Description
technical field [0001] The invention relates to a method for manufacturing a high-voltage PMOS transistor, in particular to a method for manufacturing a high-voltage PMOS transistor with gates of different doping types. The invention also relates to a high voltage PMOS transistor. Background technique [0002] The PMOS of high-voltage devices are generally buried trench devices to improve carrier mobility and drive current, so high-voltage PMOS only includes N-type polysilicon gates, specifically as figure 1 shown. At the same time, in order to increase the breakdown voltage, the diffusion region of the high-voltage device adopts a very gradual junction, which requires a large channel length, so it is still difficult to increase the driving current at the same time. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a manufacturing method of a high-voltage PMOS transistor, which can solve the contradiction between...
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IPC IPC(8): H01L21/336H01L21/28H01L29/78H01L29/49
Inventor 钱文生
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP