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TFT array substrate and manufacturing method thereof, and display device using such substrate

A substrate and array technology, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, instruments, etc., can solve problems such as low plasma resistance and Ag disappearance, and achieve high productivity and excellent display quality

Active Publication Date: 2009-10-28
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the plasma resistance of Ag is generally low, and there is a problem that Ag in the contact hole disappears when the contact hole is formed.

Method used

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  • TFT array substrate and manufacturing method thereof, and display device using such substrate
  • TFT array substrate and manufacturing method thereof, and display device using such substrate
  • TFT array substrate and manufacturing method thereof, and display device using such substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0039] First, use figure 1 An active matrix display device to which the TFT array substrate of the present invention is applied will be described. figure 1is a plan view showing the structure of a TFT substrate used in a display device. The display device of the present invention will be described by taking a liquid crystal display device as an example, but this is only an illustrative example, and a flat display device (Flat Panel display) such as an organic EL display device or the like may be used.

[0040] The display device of the present invention has a substrate 110 . For example, the substrate 110 is a TFT array substrate. On the substrate 110 , a frame region 112 is provided to surround the display region 111 . A plurality of gate wirings (scanning signal lines) 21 and a plurality of source wirings (display signal lines) 22 are formed in the display region 111 . A plurality of gate wirings 21 are provided in parallel. Likewise, a plurality of source wirings 22 ...

Embodiment approach 2

[0072] Then, use Figure 9 with Figure 10 The structure of the TFT array substrate for a display device according to Embodiment 2 of the present invention will be described. Figure 9 It is a TFT array substrate for a liquid crystal display device according to Embodiment 2. Figure 10 yes Figure 9 Sectional view of the Y-Y' section.

[0073] In this embodiment mode, in addition to the configuration described in Embodiment Mode 1, a pixel reflective electrode 25 is provided. In addition, since the structure other than the pixel reflective electrode 25 is the same as that of Embodiment 1, description thereof will be omitted. The difference in structure will be described below.

[0074] First, the interlayer insulating film 8 having the source electrode contact hole 27 and the pixel contact hole 24 is laminated so as to cover the transparent conductive film 11 . The source wiring 22 and the pixel reflective electrode 25 are provided on the interlayer insulating film 8 . ...

Embodiment approach 3

[0084] This embodiment differs from Embodiment 2 in that Ag or Ag alloy is used for the second metal thin film. Therefore, the description of the same content as that of Embodiment 2 is omitted. Ag or Ag alloy is used for the second metal thin film, thereby providing a TFT array substrate for transflective liquid crystal display with low resistance, good reflective properties, excellent optical properties and electrical properties.

[0085] In Patent Document 1, it is described that an Ag film is used for the source wiring 22 and the like. However, when forming a contact hole, there is a problem that Ag is damaged and disappears due to plasma during dry etching. Therefore, it is difficult to use Ag and Ag alloys in existing TFT structures. However, in the present invention, the source wiring 22 is formed after forming the contact hole. Therefore, the source wiring located in the upper layer is not damaged by plasma due to dry etching, and deterioration of electrical charact...

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Abstract

Provided is a display device with excellent display quality and high productivity. The TFT array substrate of the present invention has a gate electrode (1), a gate insulating film (3), a semiconductor layer (23) and a source electrode (11b) made of a transparent conductive film (11) on a substrate (110) and A drain electrode (11c), and a pixel electrode (11a) extending from the drain electrode (11c). And, on the transparent conductive film (11), an interlayer insulating film (8) having a source electrode contact hole (27) reaching the source electrode (11b) and a source wiring (22) are formed. It also has a source wiring (22) connected to the source electrode (11b) through a source electrode contact hole (27).

Description

technical field [0001] The present invention relates to a TFT array substrate, a manufacturing method thereof, and a display device using the substrate. Background technique [0002] Among photoelectric elements for display using liquid crystals, there are simple matrix type liquid crystal display devices and active matrix type liquid crystal display devices using switching elements. In particular, the use of TFT (TFT: Thin Film Transistor thin film transistor)-LCD as an active matrix liquid crystal display device is widely used in notebook computers and the like because of its excellent portability and display quality. In a TFT-LCD, a liquid crystal layer is usually sandwiched between the TFT array substrate and the counter substrate. TFTs are formed in an array on a TFT array substrate. Polarizing plates are provided on the outer sides of the TFT array substrate and the opposing substrate, respectively. And, a backlight is provided on the other side. [0003] In order ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12H01L23/522H01L21/84H01L21/768G02F1/1362G02F1/1368
Inventor 长山显祐石贺展昭
Owner MITSUBISHI ELECTRIC CORP