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Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA

A technology of atomic layer deposition and precursors, applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as contamination of tantalum-containing films

Inactive Publication Date: 2009-12-30
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Use TaCl 5 , will also make the tantalum-containing film contaminated by chlorine
Using tantalum-containing organics as the tantalum source, although not contaminated by chlorine, may have the undesirable property of high levels of carbon in the deposited layer

Method used

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  • Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
  • Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
  • Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Embodiment 1 - Using TAIMATA as a precursor, a tantalum-containing material layer (such as tantalum nitride or tantalum silicon nitride) is deposited on the surface of a substrate containing a dielectric material by using an ALD process. Its deposition thickness is about arrive between, preferably about Using PVD and other processes, a copper metal layer is deposited on the tantalum-containing material layer, and its thickness is about arrive between, preferably about Next, an electrochemical polishing (ECP) process may be performed on the copper metal layer.

Embodiment 2

[0056] Embodiment 2-Using TAIMATA as a precursor, using ALD process, on the substrate surface containing dielectric materials, deposit a tantalum-containing material layer (such as tantalum nitride or tantalum silicon nitride), and its deposition thickness is about arrive between, preferably about Using PVD or ALD process, with TAIMATA as the precursor, deposit a tantalum metal layer on the tantalum-containing material layer with a thickness of about arrive between, preferably about A plasma etch process is performed on the substrate to remove part of the material from the bottom of the via hole to a depth range of approximately arrive Between, it is more common to remove about In the next step, using PVD or ALD process, using TAIMATA as a precursor, deposit a tantalum metal layer on the tantalum-containing material layer, and its thickness range is about arrive between, preferably about Next, use PVD and other processes to deposit a copper metal layer on...

Embodiment 3

[0057] Embodiment 3 - Using TAIMATA as a precursor, a tantalum-containing material layer (such as tantalum nitride or tantalum silicon nitride) is deposited on the surface of a substrate containing a dielectric material by using an ALD process. The thickness of this deposited layer ranges from about arrive between, preferably about A plasma etch process is performed on the substrate to remove part of the material from the bottom of the via hole to a depth range of approximately arrive between, preferably about In the next step, using PVD or ALD process, using TAIMATA as a precursor, deposit a tantalum metal layer on the tantalum-containing material layer, and its thickness range is about arrive between, preferably about Next, use PVD and other processes to deposit a copper metal layer on the tantalum-containing material layer, and its thickness range is about arrive between, preferably about Next, an electrochemical polishing (ECP) process may be performed o...

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Abstract

In one embodiment of the invention, a method for depositing a tantalum-containing layer on a substrate within a process chamber is provided which includes sequentially exposing the substrate to a tantalum precursor and at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The tantalum precursor is usually tertiaryamylimido-tris(dimethylamido)tantalum (TAIMATA). The ALD process is repeated until the tantalum-containing material is deposited with a predetermined thickness. Usually, the TAIMATA is preheated prior pulsing the tantalum precursor into the process chamber. The tantalum-containing material may include tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier layer or an adhesion layer within a via or as a gate electrode material within a source / drain device.

Description

technical field [0001] Embodiments of the present invention relate to the fabrication of electronic devices, and more particularly, embodiments of the present invention relate to improvements in deposition processes for depositing tantalum-containing metal layers on substrates by sequential deposition techniques. Background technique [0002] The electronic device industry and the semiconductor industry, while constantly striving to increase production, are also committed to studying the uniformity of deposited layers on large-area substrates. These factors, together with new materials, can increase the number of integrated circuits per unit area on a substrate. , when the number of integrated circuits increases, the requirements for uniformity and process control related to the characteristics of the deposited layer are also relatively high. In multilayer integrated circuits, the formation of tantalum-containing metal layers such as tantalum, tantalum nitride, and tantalum-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/44H01L21/768H01L21/285
Inventor 克里斯托夫·马卡德王荣钧仲华尼玛丽亚·梅蒂
Owner APPLIED MATERIALS INC