Temperature gradient method rotary multiple crucible crystal growth system

Abstract

The invention discloses a multiple crucible tgt crystal growth system. It comprises crystal furnance, crucible and lift device, said crystal furnance comprises furnance body, heater and furnace tank; the furnace body includes outer shell, thermal insulating cotton layer, thermal insulating brick layer and fire proof layer from outside to inside; the height of fire proof layer is 2 / 3 to 5 / 6 of the total height of furnace tank; the heater is fixed at the height of 1 / 4- 1 / 2 of furnance tank, the furnance tank is cuboid and can accommodate a plurality of crucible crystal growth. The invention can guarantee doping concentration and dop evenly, and it can be widely used for crystal growth.

Description

technical field [0001] The invention relates to the field of crystal growth, in particular to a multi-crucible temperature gradient method crystal growth system. Background technique [0002] Chinese Patent No. 200420082546.8 describes a double heating temperature gradient method crystal growth device that can effectively grow a single crystal. Similar to the traditional temperature gradient method, the heating body is only part of the height of the crucible during the crystal growth process. By moving the heating body at an appropriate speed Gradually grow crystals. This method is effective when growing a single crystal, but cannot grow multiple crystals at the same time. [0003] The crystal growth system in the existing multi-crucible crystal growth technology generally adopts the descending method crystal growth system. In this system, the size of the furnace is extended in one direction, so that the furnace can accommodate multiple crystal growth at the same time. The ...

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Problems solved by technology

[0002] Chinese Patent No. 200420082546.8 describes a double heating temperature gradient method crystal growth device that can effectively grow a single crystal. Similar to the traditional temperature gradient method, the heating body is only part of the height of the crucible during the crystal growth process. By moving the heating body at an appropriate speed Gradually grow crystals, this type of method is effective when growing a single crystal, but cannot grow multiple crystals at the same time

[0004] The Chinese invention patent "Preparation method of fluoride ion doped lead tungstate scintillation crystal" (application number 200310109408.4) made an attempt to solve the crystal doping with volatile dopants, which disclosed a method of using tungsten after growth Lead acid crystals in a closed PbF 2 High-temperature diffusion in the atmosphere, trying to use the thermal diffusion properties of substances at high temperatures to make PbWO 3 Crystal doping modification growth technology, this growth technology can make lead tungstate crystal obtain a part of PbF 2 Doping, but the thermal diffusion in the solid is very difficult, and the diffusion decreases significantly with the increase of the depth, PbF 2 The concentration in the crystal is low and the distribution is uneven

Therefore this PbF 2 : PbWO 4 There are two insurmountable difficulties in crystal growth technology: one is that the doped crystal cannot be guaranteed to obtain the required doping concentration; the other is that the PbF in the crystal 2 Uneven distribution of doping concentration

Therefore, this method is difficult to grow high-quality PbF 2 :PbWO 4 the crystal

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