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A method of fabricating a thin film

A thin film and substrate technology, which is applied in the field of manufacturing thin films of semiconductor materials, can solve problems such as changes in the electrical properties of transferred thin films

Active Publication Date: 2010-06-02
SOITEC SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, the presence of transition metal type impurities can lead to large changes in the electrical properties of the transferred film

Method used

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  • A method of fabricating a thin film
  • A method of fabricating a thin film
  • A method of fabricating a thin film

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Comparison scheme
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Embodiment Construction

[0027] The method of the present invention is generally applicable to by and Smart Cut TM The method is compatible with any type of substrate for fabricating thin films of semiconducting materials. Such a substrate is particularly a substrate made of silicon (Si), germanium (Ge), silicon-germanium (SiGe), gallium nitride (GaN), gallium arsenide (GaAs), silicon carbide (SiC), or the like.

[0028] The present invention proposes that when using Smart Cut TM During the manufacture of the thin film, an additional heat treatment step is applied, after the implantation step and before the separation step, for the formation of microcavities in the implantation layer, wherein the Pollutants are captured. The microcavity has imperfect chemical bonds on its inner walls, which can trap atoms of contaminating species.

[0029] This additional heat treatment must be performed at a temperature high enough to allow the diffusion of contaminants into the trapping microcavity, but not excee...

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Abstract

A thin film manufacturing method includes: (a) an implementation step to form an implemented-ion concentration layer, where ion is driven into one of the surfaces of a substrate formed from semiconductor material and a thin film is demarcated at the upper part of the substrate in a predetermined depth in the substrate; (b) a step to closely contact the surface of the substrate with a reinforcing material; and (c) a step to peel the thin film touching the reinforcing material after the film is peeled between layers in a concentrated ionization layer. The method of this invention further includes a heat treatment step to trap contaminants so as to prevent peeling between layers in the concentrated ionization layer after the implantation step (a) and before the peeling step (c), and also a step to remove zones disturbed in the peeling step (c) by trapping contaminants after the step (c).

Description

technical field [0001] The present invention relates to methods of manufacturing thin films of semiconductor materials, including Smart Cut TM technology. Background technique [0002] Using Smart Cut TM Examples of techniques have been described in US Patent Document US-A-5374564 or in the article entitled "Why can SmartCut change the future of microelectronics?" by A.J. Auberton-Hervé et al., published in Int. Journal of High Speed ​​Electronics and Systems, 2000, Vol. 10, No. 1, pp. 131-146. This technique uses the following steps: [0003] a) bombarding one surface of a substrate (for example made of silicon) with light ions of the hydrogen or noble gas type (for example helium) to implant a sufficient concentration of said ions into the substrate and create a weakened microcavity layer; [0004] b) bringing said substrate surface into intimate contact with a rigid body or receiving substrate; and [0005] c) by applying heat treatment and / or mechanical separation s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/04H01L21/18H01L21/20H01L21/265H01L21/322H01L21/762H01L21/84H01L33/00
CPCH01L21/76254H01L21/20
Inventor A·托赞S·佩索尼克F·洛吉耶
Owner SOITEC SA