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Method for modifying thin film material and modified thin film material

A film material modification technology, applied in the field of film material modification and modified film materials, can solve the problems of film pollution, film sample damage, high temperature, etc., and achieve mild reaction conditions, clean preparation process and strong adsorption capacity Effect

Active Publication Date: 2022-05-31
HEFEI INNOVATION RES INST BEIHANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods of implanting hydrogen ions into materials still have some problems. For example, the method of implanting hydrogen into ionic liquids is difficult to achieve large-area hydrogen implantation, and the ionic liquids also contaminate the film; plasma hydrogen implantation due to the use of high-energy ions bombardment, so there is damage to the thin film sample; the method of high-temperature annealing to inject hydrogen usually has a high temperature, which not only has potential safety hazards but also has low hydrogen ion implantation efficiency

Method used

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  • Method for modifying thin film material and modified thin film material
  • Method for modifying thin film material and modified thin film material
  • Method for modifying thin film material and modified thin film material

Examples

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Embodiment 1

[0025] A modified SrCoO 2.5 The thin film material, the modification method of which comprises the following steps:

[0026] (1) The sample is SrCoO 2.5 Thin film, substrate is SrTiO 3 . in clean SrCoO 2.5 On the upper surface of the film 2, the nano-platinum metal layer 1 is deposited by electron beam evaporation to obtain a surface treatment material;

[0027] (2) The above-mentioned treated sample is placed in the tube furnace 6, one end of the tube furnace 6 is provided with an inlet 4, and the other end is provided with an outlet 5, and the vacuum is evacuated through the outlet 5, so that the pressure in the tube furnace is 10 -3 Pa, and then through the inlet 4, hydrogen with a volume concentration of 1% is passed into the tube furnace 6, and at the same time, it is heated and annealed, and the temperature is 100 °C. Obtained modified SrCoO 2.5 film.

Embodiment 2

[0029] In this example, the sample used is VO 2 Thin film samples, the substrate is a sapphire substrate (Al 2 O 3 ), the modification method is as follows:

[0030] (1) Put clean VO 2 The thin film sample was evaporated with a 1-nanometer gold layer on its upper surface by magnetron sputtering as a sensitization layer for hydrogen ion implantation;

[0031] (2) The above-mentioned vapor-deposited VO 2 The film sample is placed in a tube furnace, and the tube furnace is evacuated to a vacuum of 0.1Pa;

[0032] (3) feeding hydrogen with a volume concentration of 4% into the tube furnace;

[0033] (4) to VO 2 The thin film sample was heated to 120 °C for annealing treatment for 30 mins, and then the modified VO was obtained. 2 film.

[0034] For VO deposited with gold layer, respectively 2 Thin film samples and final prepared modified VO 2 Thin films were subjected to XRD tests such as figure 2 shown.

[0035] From the measurement results of XRD, it can be seen that...

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Abstract

The invention discloses a method for modifying a thin film material and the modified thin film material, which comprises vapor-depositing a nanometer noble metal layer on at least one surface of the thin film to obtain a surface treatment material; and injecting hydrogen ions into the surface treatment material. In the present invention, noble metal vapor deposition is performed on the thin film material before hydrogen heat treatment, so that the noble metal on the surface of the thin film material can better absorb the hydrogen ions, so that the hydrogen ions can be injected into the thin film material, thereby realizing the modification of the thin film material.

Description

technical field [0001] The invention belongs to the technical field of thin film materials, and particularly relates to a method for modifying thin film materials and a modified thin film material. Background technique [0002] Hydrogen ion doping involves the method of implanting hydrogen ions into materials. New phases and new physical properties of materials can be controlled by hydrogen ion doping. In recent years, the methods of obtaining new phases and properties of materials through hydrogen doping have received extensive attention from researchers. For example, by voicing 2 The implantation of hydrogen ions into thin films can be used to make highly sensitive infrared detectors. The implantation of hydrogen ions into superlattice materials can realize the regulation of its structural phase transition, magnetic and electrical properties, and can also be used to control superconducting materials through the implantation of hydrogen ions. superconducting transition te...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/18C23C14/58C23C14/30C23C14/35C23C14/48
CPCC23C14/18C23C14/185C23C14/5846C23C14/5806C23C14/30C23C14/35C23C14/48Y02P70/50
Inventor 洪宾张帆许涌张悦赵巍胜
Owner HEFEI INNOVATION RES INST BEIHANG UNIV