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Gate driver output stage with bias circuit for high and wide operating voltage range

A technology of bias circuit and output stage, which is applied in the direction of instruments, adjusting electric variables, control/regulation systems, etc., can solve problems such as breakdown and output driver loss of function, and achieve high component breakdown voltage, low cost, and wide operation Effect of voltage range

Inactive Publication Date: 2007-11-28
INTERNATIONAL RECTIFIER COEP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the voltage difference across one of these MOSFETs is higher than the maximum drain-source breakdown voltage of the IC device, breakdown will occur, causing the output driver to lose its functionality

Method used

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  • Gate driver output stage with bias circuit for high and wide operating voltage range
  • Gate driver output stage with bias circuit for high and wide operating voltage range
  • Gate driver output stage with bias circuit for high and wide operating voltage range

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Embodiment Construction

[0023] FIG. 3 shows a first embodiment of the invention comprising a CMOS device 20 having an epitaxial layer 21 formed on a p-type substrate 22 . The integrated MOSFET M1 , M2 and M3 in FIG. 3 correspond to the same elements shown schematically in FIG. 4 .

[0024] The upper layer transistor M1 in Figures 4 and 5 is connected in series with the output transistors M2 (M2') and M3 and provides a variable voltage drop depending on the applied bias voltage. Therefore, even at supply voltage V cc Above the breakdown voltage, the drain voltage of the middle transistor M2 (M2') remains below the breakdown voltage. In addition, by changing the voltage drop across M1, the output voltage V can also be adjusted OUT .

[0025] As shown in Figure 3, M1 is in the high side well and is isolated from M2 and M3 in the low side well. Due to the voltage difference V applied between M1 and the epitaxial layer 21 CC , so M1 is placed in the high side well. Isolating M1 from the other transi...

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Abstract

A simple, low cost, gate driver and bias circuit provides for a wider operating voltage range exceeding the normal component breakdown voltage of components such as NMOS and PMOS transistors. A CMOS process with an epitaxial layer as bulk and p-type substrate is used to implement the circuit in this example.

Description

technical field [0001] The present invention relates to a circuit for driving a gate of a MOSFET or an IGBT, and more particularly to an output stage of an integrated gate driver with a bias circuit capable of providing a high and wide operating voltage range. Background technique [0002] Figure 1 shows a conventional CMOS push-pull output stage comprising MOSFETs M100 and M200 for driving the gates of discrete MOSFETs or IGBTs. [0003] Figure 2 shows a conventional NMOS totem pole output stage comprising MOSFETs M100' and M200 for driving the gates of discrete MOSFETs or IGBTs. [0004] The maximum operating voltage of the circuits in Figure 1 and Figure 2 is determined by the voltage difference between the drain node and the source node of M100 and M200 or M100' and M200, respectively. If the voltage difference across one of these MOSFETs is higher than the IC device's maximum drain-source breakdown voltage, breakdown will occur, causing the output driver to lose its fu...

Claims

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Application Information

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IPC IPC(8): G05F1/10G05F3/02
Inventor 郑荣德
Owner INTERNATIONAL RECTIFIER COEP