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Method for effectively controlling CMP milling residual-film thickness

A technology of residual film and grinding rate, which is applied in the field of effectively controlling the residual film thickness of CMP grinding, and can solve the problems of residual film thickness fluctuation, r/R ratio change, etc.

Inactive Publication Date: 2008-01-16
SHANGHAI HUA HONG NEC ELECTRONICS
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0011] However, in the actual grinding process, the grinding rate r and R of the light sheet and the product are not fixed due to the influence of many factors such as consumables and products, and the ratio of r / R also varies greatly; according to this, from Equation 3 can infer that K is not a constant
This is why the original calculation method leads to large fluctuations in the film thickness of the residual film

Method used

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  • Method for effectively controlling CMP milling residual-film thickness
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  • Method for effectively controlling CMP milling residual-film thickness

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Embodiment Construction

[0028] The CMP process includes STI-CMP (Shallow Trench Isolation Polishing), PMD-CMP (Pre-Metal Dielectric Film Polishing), and its film quality includes BPSG (boron-doped, phosphosilicate glass), PSG (phosphorus-silicate glass, etc.) ; IMD-CMP (intermetallic film polishing), its film quality includes HDP (high density plasma oxide film), FSG (fluorine-doped silicon glass), P-SiO2 (plasma oxide film, etc.).

[0029] First of all, after the arrival of new products, the first 10 batches still calculate the grinding time t1, t2...t10 according to the original method (Formula 1).

[0030] t=(Tp-K) / r Formula 1

[0031] Secondly, modify the existing software and obtain the parameters required by formula 4 according to the actual production as follows:

[0032] 1) The average grinding time of the first 10 batches of products,

[0033] t=(t1+t2+t3....+t10) / 10

[0034] 2) direct test obtains the average front film thickness of the first 10 batches of products,

[0035] Tp=(Tp1+Tp2...

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Abstract

The invention discloses a method for effectively controlling the thickness of plastic film residue ground by CMP. According to the measured products, the method averages the grinding time, the thickness of the original film, the grinding rate of a pilot light piece, the grinding rate, and the thickness so as to control the grinding time. Combined with factors obtained in practical production that affect the grinding time, the invention can ascertain the needed grinding time more accurately, and finally the invention can effectively control the thickness of the film after the film is ground by CMP.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for effectively controlling the thickness of a CMP grinding residual film. Background technique [0002] CMP (Chemical Mechanical Polishing) is one of the very important processes in the semiconductor manufacturing process. Existing CMP technology mainly is to utilize the film thickness before the product, the grinding rate of the leading light plate and a fixed value related to the target value of the remaining film to calculate the grinding time of the product (as shown in formula 1), and the grinding time of the product after CMP grinding Thickness is controlled. [0003] t=(Tp-K) / r Formula 1 [0004] Among them: t is the grinding time; Tp is the thickness of the front film; K is a parameter related to the product; r is the grinding rate of the leading light plate. [0005] However, in the actual control process, K is not a constant, because this method is c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B49/00B24B37/005
Inventor 李晗玲刘艳平
Owner SHANGHAI HUA HONG NEC ELECTRONICS