Apparatus for controlling plasma etching process

Abstract

An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a control device and method used for etching objects with plasma. Background technique [0002] In integrated circuit manufacturing technology, a photoresist layer is generally applied on the surface of a semiconductor wafer before exposing the photoresist through a mask. Then, a post-exposure baking process and a developing process are performed to form a patterned photoresist layer with a plurality of holes. After the above photoresist layer is verified by manufacturing specifications, the exposed part of the wafer is etched by using the above holes. After the wafer is etched, the photoresist layer is removed. [0003] The dry etching process is one of the techniques used to remove the portion of the wafer exposed through the holes in the photoresist layer. One representative example of the dry etching technology is the well-known plasma etching process. Plasma etching is often us...

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Problems solved by technology

[0006] Therefore, although the existing technology is sufficient to achieve the expected effect under general conditions, it still cannot meet the full range of requirements

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