Apparatus for controlling plasma etching process

Abstract

An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

Description

Technical field [0001] The invention relates to a semiconductor process, in particular to a control device and method used when plasma is used to etch objects. Background technique [0002] In integrated circuit manufacturing technology, generally, a photoresist layer is applied on the surface of the semiconductor wafer before the photoresist is exposed through a photomask. Then, a post-exposure baking process and a development process are performed to form a patterned photoresist layer with a plurality of holes. After the above-mentioned photoresist layer is verified by the manufacturing specifications, the above-mentioned holes are used to etch the exposed part of the wafer. After the wafer is etched, the photoresist layer is removed. [0003] The dry etching process is one of the techniques used to remove the exposed part of the wafer through the hole of the photoresist layer. One of the representative examples of dry etching technology is the well-known plasma etching process...

AI Technical Summary

Problems solved by technology

[0006] Therefore, although the existing technology is sufficient to achieve the expected effect under general conditions, it still cannot meet the full range of requirements

Images