Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pixel structure and its repairing method

A technology of pixel structure and pixel electrode, applied in the field of pixel structure and its repair

Active Publication Date: 2008-06-04
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF0 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In order to solve the above problems, the purpose of the present invention is to provide a method for repairing the pixel structure to repair defective pixels, and to replace dark spots or faint spots with spare thin film transistors for repairing permanent defects.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pixel structure and its repairing method
  • Pixel structure and its repairing method
  • Pixel structure and its repairing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The pixel structure of the thin film transistor liquid crystal display is arranged on a substrate, and a plurality of data lines and scanning lines are arranged on the substrate to cross to define a plurality of pixel areas, and each pixel area includes a first thin film transistor, a second thin film transistor, A pixel electrode and a repair pattern, wherein the first and second thin film transistors both include a gate, source and drain, the first thin film transistor and the second thin film transistor are driven by the data line and the scanning line, wherein the first thin film transistor The drain of the transistor is electrically connected to the pixel electrode, and the gate or drain of the second thin film transistor remains as an independent metal electrode.

[0038] The method of repairing, when a defective pixel occurs, cut off the pixel electrode and the drain of the first thin film transistor, connect the gate or drain of the first and second thin film tra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A pixel structure comprises a standby thin film transistor and a working thin film transistor. A grid electrode or drain electrode of the standby thin film transistor is preserved as an independent metal electrode. When a bad pixel appears, the standby thin film transistor substitutes for the working thin film transistor, and then the bad pixel can be recovered as a normal pixel. The repairing method of the present invention is that: the drain electrode of the working thin film transistor with the bad pixel appearing is cut off from an electric pathway of a pixel electrode; the grid electrode of the standby thin film transistor is electrically connected with a scanning line or with the pixel electrode, so as to replace the working thin film transistor.

Description

technical field [0001] The present invention relates to a pixel structure and its repairing method, in particular to a pixel structure and its repairing method for repairing bad pixels by using spare thin film transistors. Background technique [0002] For pixel repair of TFT-LCD, a common method is to repair the bright spots of the pixels into permanent dark spots or micro-bright spots, but they are still permanent defect spots. [0003] 11 is an equivalent circuit diagram of a known pixel structure, illustrating the circuit of a thin film transistor, wherein the gate 410 of the thin film transistor is electrically connected to the scan line 200, the source 420 is electrically connected to the data line 100, and the drain 430 is electrically connected to A pixel electrode 300 . [0004] figure 2 It is an equivalent circuit diagram of permanent dark spot repair in the prior art. The drain 430 of the thin film transistor is short-circuited through the repair point 510 and e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G02F1/136G09G5/10G09G3/36
Inventor 林俊安何建国
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com