Nitride semiconductor light emitting device
A technology of nitride semiconductors and light-emitting devices, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reduced light output efficiency and difficulty in obtaining high brightness, and achieve the effect of reducing driving voltage
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example 1
[0060] In Example 1, a figure 2 A nitride semiconductor light-emitting diode device configured as shown in the schematic cross-sectional view.
[0061] First, the sapphire substrate 101 is placed in a reactor of MOCVD (Metal Organic Chemical Vapor Deposition) equipment. Then, the temperature of the sapphire substrate was raised to 1050° C. while hydrogen gas was flowed into the reaction furnace to perform cleaning of the surface (C surface) of the sapphire substrate.
[0062] Next, the temperature of the sapphire substrate 101 is lowered to 510° C. and hydrogen gas as a carrier gas and ammonia and TMG (trimethylgallium) as a raw material gas flow into the reaction furnace, whereby the surface (C surface) of the sapphire substrate 101 is deposited on the surface (C surface) of the sapphire substrate 101. grow the GaN buffer layer 102 to a thickness of about 20 nm.
[0063] The temperature of the sapphire substrate 101 is raised to 1050° C. and hydrogen gas as a carrier gas, ...
example 2
[0077] In Example 2, a figure 2 A nitride semiconductor light emitting diode device configured as shown in the schematic cross-sectional view.
[0078] The p-type GaN contact layer 107 was grown under the same conditions and in the same method as in Example 1.
[0079] After the growth of the p-type contact layer 107, the temperature of the sapphire substrate 101 is lowered to 750° C. and nitrogen as a carrier gas, ammonia, TMG and TMI as a raw material gas, and CP2Mg as an impurity gas flow into the reaction furnace, thereby using MOCVD grown on the p-type GaN contact layer 107 by 1×10 20 / cm 3 The concentration of Mg-doped In 0.1 Ga 0.9 The p-type tunnel junction layer 108 made of N (p-type dopant concentration: 1×10 20 / cm 3 ) to a thickness of 10 nm. The band gap of the p-type GaN contact layer 107 becomes larger than the band gap of the p-type tunnel junction layer 108 . Furthermore, in the nitride semiconductor light emitting diode device in Example 2, the thick...
example 3
[0083] In Example 3, a figure 2 A nitride semiconductor light emitting diode device configured as shown in the schematic cross-sectional view.
[0084] The p-type GaN contact layer 107 was grown under the same conditions and in the same method as in Example 1.
[0085] Then, after the growth of the p-type GaN contact layer 107, the temperature of the sapphire substrate 101 is lowered to 650°C and nitrogen as a carrier gas, ammonia, TMG, and TMI as a raw material gas, and CP2Mg as an impurity gas flow into the reaction furnace , so that the p-type GaN contact layer 107 is grown on the p-type GaN contact layer 107 by 1×10 20 / cm 3 The concentration of Mg-doped In 0.5 Ga 0.5 The p-type tunnel junction layer 108 made of N (the concentration of the p-type dopant: 1×10 20 / cm 3 ) to any thickness in the range of 2 to 10 nm. The band gap of the p-type GaN contact layer 107 becomes larger than the band gap of the p-type tunnel junction layer 108 .
[0086] Then, the nitride s...
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