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Method for programming flash device

A technology of flash memory and programming voltage, applied in the field of flash memory devices, which can solve the problem of losing the characteristics of erasing cells

Inactive Publication Date: 2008-10-08
SK HYNIX INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, cells with fast programming speeds may lose the characteristics of erasing cells even at the same end voltage

Method used

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  • Method for programming flash device

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no. 1 example

[0039] According to the first embodiment of the present invention, the method of setting the end bias voltage of ISPP operation is detailed as follows.

[0040] First, a first programming voltage for ISPP operation is defined. The first programming voltage can be defined as 17V, which is high enough to program a certain percentage of memory cells in one programming cycle, but lower than the end bias voltage.

[0041] When a first program voltage (or first ISPP voltage) for an ISPP operation is applied to a word line of a selected page, memory cells of the selected page are programmed.

[0042] Then, the threshold voltage of the memory cell is checked by supplying a verify voltage to the word line. A determination is then made as to whether the memory cell has been properly programmed based on whether the threshold voltage is higher than the verify voltage. If, as a result of the determination, it is determined that the memory cell is not properly programmed, the first ISPP v...

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Abstract

A method for operating a flash memory includes a word line exerting a first programming voltage Vp1 to multi-memory cells. The first threshold voltage distribution of the memory cell is obtained by measuring a threshold voltage of the memory cell. A second programming voltage Vp2 is exerted to the word line of the memory cell programmed by using the first programming voltage Vp1. A threshold voltage of the memory cell programmed by using the second programming voltage Vp2 is measured to obtain a distribution of the second threshold voltage of the memory cell. Whether or not the memory cell programmed by using the second programming voltage is programmed appropriately, gives a judgment.If the memory cell is judged with appropriate program, the second programming voltage is defined as an end voltage bias to carry out a program operation.If the memory cell is not judged with appropriate program, using the third programming voltage for programming which is higher than the second programming voltage.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2007-032838 filed on Apr. 3, 2007, which is hereby incorporated by reference in its entirety. technical field [0002] The present invention relates to a flash memory device, and more particularly, to a programming method for preventing a disturb phenomenon without increasing a program speed. Background technique [0003] In recent years, there has been an increasing demand for semiconductor memory devices that are electrically programmable and erasable and that retain data without losing data even when the power is turned off. In addition, in order to develop a large-capacity memory device that can store a lot of data, highly integrated technology storage units have been developed. To this end, a NAND flash memory device has been proposed, in which a plurality of memory cells are connected in series to form a string, and a plurality of the strings form a memory cell array. [0004] Generally spea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C16/10
CPCG11C16/10G11C16/3454G11C16/12G11C16/34
Inventor 李熙烈
Owner SK HYNIX INC
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