Unlock instant, AI-driven research and patent intelligence for your innovation.

Electrostatic discharge protecting circuit

A technology of electrostatic discharge protection and electrostatic discharge circuit, which is applied in the field of electrostatic discharge protection circuit, can solve problems such as damage to the internal circuit of the chip, and achieve the effect of avoiding electrostatic discharge damage

Active Publication Date: 2008-12-24
SEMICON MFG INT (SHANGHAI) CORP
View PDF1 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the first four conventional modes, the other two verification modes make the internal circuits of the chip more susceptible to electrostatic discharge damage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic discharge protecting circuit
  • Electrostatic discharge protecting circuit
  • Electrostatic discharge protecting circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The electrostatic discharge protection circuit of the present invention discharges the electrostatic discharge voltage when the chip is powered on through the electrostatic discharge circuit, and delays opening the transmission gate through the controllable transmission gate circuit to block the electrostatic discharge voltage, and discharges the electrostatic discharge voltage in the electrostatic discharge circuit , so that after the chip is powered on, the electrostatic discharge voltage is exhausted.

[0021] refer to figure 1 As shown, the electrostatic discharge protection circuit of the present invention includes an electrostatic discharge circuit 1 and a controllable transmission gate circuit 2 .

[0022] The electrostatic discharge circuit 1 receives the voltage from the chip pin and transmits it to the controllable transmission gate circuit 2, and when the chip starts to be powered on, receives the electrostatic discharge voltage entering from the chip pin, an...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a static discharge protecting circuit which comprises a static discharge circuit and a controllable transmission gate circuit connected with the output end of the static discharge circuit. The static discharge circuit achieves the purpose of consuming static discharge voltage by discharging the static discharge voltage through a transistor in the static discharge circuit. The controllable transmission gate circuit obstructs the static discharge circuit by closing a transmission gate until the static discharge circuit consumes up the static discharge voltage. The static discharge protecting circuit of the invention can play the role of preventing the internal circuit from being damaged by the static discharge.

Description

technical field [0001] The invention relates to an electrostatic discharge protection circuit. Background technique [0002] When two non-conductive objects are in contact with each other, electrons may be transferred, which will cause the two non-conductive objects to generate additional charges. This additional charge is static electricity. Electro-Static Discharge (ESD) occurs when the accumulated static electricity on an object discharges an object with a relatively low potential. Generally, the generation of electrostatic discharge can be divided into two categories: direct type and indirect type. The direct type refers to the direct contact between the object and another charged object generated by friction, and the indirect type refers to the change of the object itself due to the surrounding charge. And the induction is electrified. [0003] However, when an object with static electricity touches the metal pins of the integrated circuit, the resulting instantaneous...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/00H01L23/60
Inventor 俞大立程惠娟刘晶陈先敏范礼贤
Owner SEMICON MFG INT (SHANGHAI) CORP