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Transparent rare-earth-doped bismuth titanate luminous ferro-electricity thin film and method for preparing same

A rare earth doped and ferroelectric thin film technology is applied in the field of transparent rare earth doped bismuth titanate luminescent ferroelectric thin film and its preparation, which can solve the problems of neglecting the luminescence properties of thin films, and achieves easy large-area film formation, low preparation cost, good stability

Inactive Publication Date: 2009-01-07
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented technology provides an improved way to make high quality films with strong magnetic or electric polarization characteristics that are useful in various fields such as electronics (parents). It involves mixing two different types of solvents together before adding special chemical substances like silver salt) followed by evaporation on glass plates at very specific temperatures. These techniques allow for precise placement of particles onto substrates without damaging them during manufacturing processes. Additionally, it allows for efficient production of these layers while maintaining their desired qualities over time. Overall, this process simplifies the fabricating process and reduces costs compared to existing methods used today.

Problems solved by technology

The technical problem addressed by this patented technology relates to developing novel types of materials containing both fluorescing elements like Eu3+ or Ce4+) and ferromagnetic characteristics called Bi_/TiO, which are important components of these materials due to their ability to store energy when subjected to an external magnetic field. This could lead us to create better electronic device designs where they may replace traditional photovoltaic cells while still maintaining high performance capabilities.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) 6.116g of bismuth nitrate containing five crystal waters and 1.310g of europium nitrate containing five crystal waters are dissolved in a mixture of ethylene glycol methyl ether and glacial acetic acid with a volume ratio of 2:1, stirred and heated to 50 ℃, and keep it warm for 1 hour, then cool down to room temperature, then add 2.186g acetylacetone, 3.737g tetrabutyl titanate and 0.2mL hydrogen peroxide, and continue to stir for 2 hours to obtain a stable and clear rare earth doped bismuth titanate solution, namely the precursor body solution with a concentration of 0.06mol / L.

[0024] (2) Spin-coat the prepared rare earth-doped bismuth titanate solution on the ITO conductive glass substrate, spin the glue at a speed of 3000 rpm for 30 seconds, and put the wet film in a baking oven at 200 °C for each layer. Bake on hot counter for 5 minutes to remove organic matter. Repeat this 6 times until 300nm is obtained;

[0025] (3) Place the dried film in an electric fur...

Embodiment 2

[0027] (1) 3.0559g of bismuth nitrate containing five crystal waters and 0.6527g of samarium nitrate containing five crystal waters are dissolved in a mixture of ethylene glycol methyl ether and glacial acetic acid with a volume ratio of 2:1, stirred and heated to 50 ℃, keep warm for 1 hour, lower to room temperature, add 0.6mL nitric acid dropwise, then add 1.0925g acetylacetone and 1.8566g tetrabutyl titanate successively, and continue stirring for 2 hours to obtain stable and clear rare earth doped bismuth titanate The solution, namely the precursor solution, has a concentration of 0.06mol / L.

[0028] (2) Spin-coat the prepared rare earth-doped bismuth titanate solution on a quartz glass substrate. The speed of glue rejection is about 3000 rpm, and the time is 30 seconds. For each layer, place the wet film on a baking table at 200°C for 5 minutes to remove organic matter until 300nm is obtained;

[0029] (3) Place the dried film in an electric furnace and perform annealin...

Embodiment 3

[0031] (1) 3.0560g of bismuth nitrate containing five crystal waters and 0.788g of erbium nitrate containing five crystal waters are dissolved in a mixed solution with a volume ratio of ethylene glycol methyl ether and glacial acetic acid of 2:1, stirred and heated to 50 ℃, and keep it warm for 1 hour, lower it to room temperature, add 0.05mL of hydrogen peroxide dropwise, then add 1.0964g of acetylacetone and 1.8659g of tetrabutyl titanate successively, and continue stirring for 2 hours to obtain stable and clear rare earth doped bismuth titanate The solution, namely the precursor solution, has a concentration of 0.06mol / L.

[0032] (2) with embodiment 2;

[0033] (3) Place the dried film in an electric furnace and perform annealing treatment in an oxygen atmosphere. The temperature is 550-650°C, heat preservation for 1 hour, and then cool naturally with the furnace to obtain (Bi 4-x Er x ) Ti 3 o 12 (x=0.85) film. The prepared film is compact and uniform without cracks...

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PUM

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Abstract

The invention discloses a transparent rare earth doping bismuth titanate luminous ferroelectric film and the preparation method thereof. The film provided by the invention contains (Bi4 minus xLnx) Ti3O12, wherein, the x is larger than or equal to 0 and smaller than or equal to 0.85; and the Ln is rare earth elements Pr, Dy, Ho, Er, Eu, Tm or Yb. The invention further provides a preparation method of the luminous ferroelectric film, which comprises the following step of preparing the solution of a front drive body; coating; baking; and annealing. The luminous ferroelectric film provided by the invention has the advantages of not only good ferroelectricity, dielectric performance and optical transmissibility performance, but also photo luminescent performance discovered. The method for preparing the transparent rare earth doping bismuth titanate luminous ferroelectric film has the advantages that easy control of the components of the film, and good uniformity, as well as low preparation cost, gentle condition, easy large-sized film formation, and uniformity, compactness and non-crack of the film prepared. The technical proposal provided by the transparent rare earth doping bismuth titanate luminous ferroelectric film, and the method thereof ensures that the materials have wider application foreground in the photoelectric material field.

Description

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Claims

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Application Information

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Owner SUN YAT SEN UNIV
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