Transparent rare-earth-doped bismuth titanate luminous ferro-electricity thin film and method for preparing same
A rare earth doped and ferroelectric thin film technology is applied in the field of transparent rare earth doped bismuth titanate luminescent ferroelectric thin film and its preparation, which can solve the problems of neglecting the luminescence properties of thin films, and achieves easy large-area film formation, low preparation cost, good stability
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Embodiment 1
[0023] (1) 6.116g of bismuth nitrate containing five crystal waters and 1.310g of europium nitrate containing five crystal waters are dissolved in a mixture of ethylene glycol methyl ether and glacial acetic acid with a volume ratio of 2:1, stirred and heated to 50 ℃, and keep it warm for 1 hour, then cool down to room temperature, then add 2.186g acetylacetone, 3.737g tetrabutyl titanate and 0.2mL hydrogen peroxide, and continue to stir for 2 hours to obtain a stable and clear rare earth doped bismuth titanate solution, namely the precursor body solution with a concentration of 0.06mol / L.
[0024] (2) Spin-coat the prepared rare earth-doped bismuth titanate solution on the ITO conductive glass substrate, spin the glue at a speed of 3000 rpm for 30 seconds, and put the wet film in a baking oven at 200 °C for each layer. Bake on hot counter for 5 minutes to remove organic matter. Repeat this 6 times until 300nm is obtained;
[0025] (3) Place the dried film in an electric fur...
Embodiment 2
[0027] (1) 3.0559g of bismuth nitrate containing five crystal waters and 0.6527g of samarium nitrate containing five crystal waters are dissolved in a mixture of ethylene glycol methyl ether and glacial acetic acid with a volume ratio of 2:1, stirred and heated to 50 ℃, keep warm for 1 hour, lower to room temperature, add 0.6mL nitric acid dropwise, then add 1.0925g acetylacetone and 1.8566g tetrabutyl titanate successively, and continue stirring for 2 hours to obtain stable and clear rare earth doped bismuth titanate The solution, namely the precursor solution, has a concentration of 0.06mol / L.
[0028] (2) Spin-coat the prepared rare earth-doped bismuth titanate solution on a quartz glass substrate. The speed of glue rejection is about 3000 rpm, and the time is 30 seconds. For each layer, place the wet film on a baking table at 200°C for 5 minutes to remove organic matter until 300nm is obtained;
[0029] (3) Place the dried film in an electric furnace and perform annealin...
Embodiment 3
[0031] (1) 3.0560g of bismuth nitrate containing five crystal waters and 0.788g of erbium nitrate containing five crystal waters are dissolved in a mixed solution with a volume ratio of ethylene glycol methyl ether and glacial acetic acid of 2:1, stirred and heated to 50 ℃, and keep it warm for 1 hour, lower it to room temperature, add 0.05mL of hydrogen peroxide dropwise, then add 1.0964g of acetylacetone and 1.8659g of tetrabutyl titanate successively, and continue stirring for 2 hours to obtain stable and clear rare earth doped bismuth titanate The solution, namely the precursor solution, has a concentration of 0.06mol / L.
[0032] (2) with embodiment 2;
[0033] (3) Place the dried film in an electric furnace and perform annealing treatment in an oxygen atmosphere. The temperature is 550-650°C, heat preservation for 1 hour, and then cool naturally with the furnace to obtain (Bi 4-x Er x ) Ti 3 o 12 (x=0.85) film. The prepared film is compact and uniform without cracks...
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