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Image sensor and method for manufacturing the sensor

An image sensor, conductive technology, applied in semiconductor/solid-state device manufacturing, image communication, electric solid-state devices, etc., can solve the problems of dark current saturation and sensitivity reduction, not easy to move, image errors, etc.

Inactive Publication Date: 2011-11-16
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the charge sharing phenomenon occurs, the sensitivity of the output image can be reduced and image errors can be generated
Additionally, dark current and / or saturation and sensitivity can be reduced since photocharges may not readily move between the photodiode and readout circuitry

Method used

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  • Image sensor and method for manufacturing the sensor
  • Image sensor and method for manufacturing the sensor
  • Image sensor and method for manufacturing the sensor

Examples

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Embodiment Construction

[0013] An image sensor and a method of manufacturing the image sensor according to some embodiments will be described with reference to the accompanying drawings.

[0014] Exemplary figure 1 is a cross-sectional view of an image sensor according to some embodiments. reference example figure 1 , the image sensor may include metal interconnects 150 and readout circuitry 120 on and / or over first substrate 100 (see Figure 2B ). Metal layer 160 may be provided on and / or over metal interconnect 150 . The image sensing device 210 may be electrically connected to the metal layer 160 , and the image sensing device 210 may include a first conduction type conduction layer 214 and a second conduction type conduction layer 216 .

[0015] According to some embodiments, image sensing device 210 may be a photodiode, a light barrier, or any combination thereof. For simplicity of description, it is referred to as photodiode 210 . According to some embodiments, a photodiode may be forme...

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PUM

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Abstract

Embodiments relate to an image sensor. According to embodiments, an image sensor may include a metal interconnection, readout circuitry, a first substrate, a metal layer, and an image sensing device. The metal interconnection and the readout circuitry may be formed on and / or over the first substrate. The image sensing device may include a first conduction type conduction layer and a second conduction type conduction layer and may be electrically connected to the metal layer. According to embodiments, an electric field may not be generated on and / or over an Si surface. This may contribute to areduction in a dark current of a 3D integrated CMOS image sensor.

Description

technical field [0001] The present invention relates to an image sensor and a manufacturing method thereof. Background technique [0002] An image sensor may be a semiconductor device that converts an optical image into an electrical signal. Image sensors may be classified into, for example, Charge Coupled Device (CCD) image sensors and Complementary Metal Oxide Silicon (CMOS) image sensors (CIS). [0003] During the fabrication process of the image sensor, photodiodes may be formed in the substrate using ion implantation. The size of the photodiode can be reduced to increase the number of pixels without increasing the chip size. This can reduce the area of ​​the light receiving portion. Image quality may be reduced as a result. [0004] Since the stack height may not decrease as much as the area of ​​the light receiving portion, the number of photons incident to the light receiving portion may also decrease due to light diffraction called Airy disk. [0005] To address...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L23/522H01L25/18H01L23/488H01L21/82H01L21/60H01L27/14H04N5/335H04N5/361H04N5/369
CPCH01L27/14634H01L27/14683H01L27/14665H01L27/146
Inventor 黄俊
Owner DONGBU HITEK CO LTD