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Method for preparing ferroelectricicity-ferromagnetic composite thick film by combination of electrophoretic deposition and sol-gel

A technology of electrophoretic deposition and gel phase, applied in the application of magnetic film to substrate, piezoelectric/electrostrictive/magnetostrictive devices, electrophoretic plating, etc., to achieve unrestricted substrate shape, good electrical properties and Magnetic performance, the effect of simple equipment

Inactive Publication Date: 2010-12-08
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, the preparation of ferroelectric-ferromagnetic composite thick films by electrophoretic deposition and sol-gel method is rarely reported.

Method used

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  • Method for preparing ferroelectricicity-ferromagnetic composite thick film by combination of electrophoretic deposition and sol-gel
  • Method for preparing ferroelectricicity-ferromagnetic composite thick film by combination of electrophoretic deposition and sol-gel
  • Method for preparing ferroelectricicity-ferromagnetic composite thick film by combination of electrophoretic deposition and sol-gel

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Embodiment 1: Electrophoretic deposition of ferromagnetic thick film CoFe on platinum electrode 2 o 4 (Electrophoretic deposition for 1 minute):

[0036] A. The chemical raw material used is cobalt ferrite nanopowder, and the solvent is n-butanol. Weigh 0.06g of cobalt ferrite nanopowder, then stir the powder in 60mL n-butanol solution for 10 minutes, and then ultrasonically disperse 20 minutes to form a well-mixed suspension, the concentration of the suspension is 1g / L;

[0037]B. Adjust the used constant current / constant voltage power supply to a constant current state, and maintain a constant output value of 20μA;

[0038] C. Fix the platinum electrode used for electrophoretic deposition in the electrophoresis tank, the distance between the two plates is 2cm, and keep the two plates parallel during the electrophoresis process;

[0039] D. Connect the two electrodes to the power supply and keep for 1 minute to obtain a thick film with a thickness of about 2 μm;

...

Embodiment 2

[0048] It differs from Example 1 in that the electrophoretic deposition of CoFe 2 o 4 The time is 2 minutes, CoFe 2 o 4 The thickness of the thick film is about 2.5 μm, the final thickness of the composite thick film is about 3 μm, and the preparation method is the same as that of Example 1.

[0049] Finally, BaTiO was obtained 3 -CoFe 2 o 4 Ferroelectric-ferromagnetic composite thick film. The electrical performance test adopts the DC sputtering method to make Au circular electrodes on the upper surface with a thickness of about 100nm.

[0050] The X-ray diffraction analysis pattern of the obtained ferroelectric-magnetoelectric thick film is as follows: Figure 4 As shown, the X-ray diffraction analysis pattern shows that the thick film presents BaTiO 3 The phase structure of perovskite and CoFe 2 o 4 The spinel phase structure, without the generation of intermediate products; the ferroelectric-ferromagnetic composite thick film BaTiO prepared by deposition 3 -CoFe...

Embodiment 3

[0052] Electrophoretic deposition of ferromagnetic thick film CoFe on alumina substrate coated with high temperature resistant electrode as electrode 2 o 4 (Electrophoretic deposition for 1 minute):

[0053] A. The chemical raw material used is cobalt ferrite nano powder, the solvent is n-butanol, weigh 0.06g of cobalt ferrite nano powder, and then put the powder in 60mL of acetylacetone solution with iodine concentration of 1.4g / L Stir for 10 minutes, then ultrasonically disperse for 20 minutes to form a uniformly mixed suspension with a concentration of 1 g / L.

[0054] B. Adjust the used constant current / constant voltage power supply to a constant current state, and maintain a constant output value of 20μA.

[0055] C. Fix the aluminum oxide substrate plated with high-temperature-resistant electrodes used for electrophoretic deposition in the electrophoresis tank as an electrode. The distance between the two plates is 2 cm, and the two plates are always kept parallel durin...

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Abstract

The invention relates to the field of electronic materials and devices and discloses a method for preparing ferroelectricicity-ferromagnetic composite thick film by combination of electrophoretic deposition and sol-gel. The preparation method of the inventin comprises the following steps: first, electrophoretic deposition method is used to prepare cobalt ferrite thick film with a certain thickness; then, sol- gel method is used to coat BaTiO3 thin film, the ferroelectricicity-ferromagnetic composite thick film is obtained after high-heat treatment. The ferroelectricicity-ferromagnetic composite thick film prepared by the method of the invention has excellent electrical property and magnetic property, and can be used for preparing thick film sensors, micro positioners, feedback systems andthe like.

Description

technical field [0001] The invention belongs to the field of electronic materials and devices, and in particular relates to a method for preparing a ferroelectric-ferromagnetic composite thick film by combining electrophoretic deposition and sol-gel. Background technique [0002] In recent years, magnetoelectric materials, as a very important class of functional materials, have been widely used in fields such as magnetic recording, filters, sensors, multilayer chip inductors and quantum computers, and have attracted widespread attention. Magnetoelectric materials can be divided into single-phase magnetoelectric materials and composite magnetoelectric materials. But so far, the magnetoelectric coupling coefficient of the single-phase materials studied is small, and their Curie temperature is generally lower than room temperature. When the temperature rises to the Curie temperature, the magnetoelectric coupling coefficient drops to zero. Therefore, The application of single-p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C28/00C25D13/02C23C20/08H01L41/22H01F10/20H01F10/18H01F41/14H01L41/318
Inventor 翟继卫张玲
Owner TONGJI UNIV