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Charge pump circuit and method for controlling same

A technology of charge pump and voltage control, which is applied in the direction of control/regulation system, regulation of electrical variables, instruments, etc., and can solve problems such as increasing costs

Active Publication Date: 2013-10-30
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] However, in the case of using an external Schottky diode as described above, additional components must be added to the semiconductor device, thereby increasing the cost

Method used

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  • Charge pump circuit and method for controlling same
  • Charge pump circuit and method for controlling same
  • Charge pump circuit and method for controlling same

Examples

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Embodiment Construction

[0033] Various example embodiments will now be described more fully with reference to the accompanying drawings. However, specific structural and functional details disclosed herein are merely for purposes of describing example embodiments, those skilled in the art will understand that example embodiments may be embodied in many alternative forms and should not be construed as merely limited to the examples presented here.

[0034]It will be understood that although the terms first, second etc. are used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish elements. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0035] It will be understood that w...

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Abstract

The invention provides a charge pump circuit and a relational method. The charge pump circuit comprises a first voltage generating unit, a second voltage generating unit, a third voltage generating unit, a first control unit, a second control unit and a latch preventing unit, wherein the first voltage generating unit is used for stabilizing the voltage of a first output signal, the second voltage generating unit is used for boosting the voltage of a second output signal, the third voltage generating unit responds to the first output signal and the second output signal and is used for boosting the voltage of a third output signal, the first control unit is connected between the first voltage generating unit and the third voltage generating unit, the second control unit is connected between the second voltage generating unit and the third voltage generating unit, the first control unit and the second control unit break the outputs of the first voltage generating unit and the second voltage generating unit in a voltage boosting period of the second output signal, the third output signal is maintained before third voltage, and the latch preventing unit prevents the latch operation caused by a parasitic transistor.

Description

[0001] priority statement [0002] This application claims the benefit of Korean Patent Application No. 10-2007-0042759 filed with the Korean Intellectual Property Office on May 2, 2007, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] Example embodiments relate to a charge pump circuit and, more particularly, to a charge pump circuit and a method of controlling the same for addressing activation issues associated with parasitic transistors. Example embodiments of charge pumps and related methods do not use Schottky diodes. Background technique [0004] FIG. 1 is a block diagram illustrating a conventional charge pump circuit 100 . [0005] Referring to FIG. 1 , a conventional charge pump circuit 100 includes a voltage regulator 110 , a first charge pump 120 , a second charge pump 130 , and a booster 140 . The voltage regulator 110 stabilizes the input signal IN to a first output signal OUT_1 having a first voltage VCI1 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/46
Inventor 金孝珍姜在声金时雨
Owner SAMSUNG ELECTRONICS CO LTD
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