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Method of manufacturing semiconductor devices and etching device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as roughening of peripheral parts, and achieve the effect of suppressing roughening

Inactive Publication Date: 2009-11-18
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For this reason, if etching for removing the hard mask is performed for a long time, the peripheral portion of the layer to be etched is roughened

Method used

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  • Method of manufacturing semiconductor devices and etching device
  • Method of manufacturing semiconductor devices and etching device
  • Method of manufacturing semiconductor devices and etching device

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Embodiment Construction

[0027] The invention will now be described herein with reference to illustrative embodiments. Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the invention is not limited to the embodiments shown for explanatory purposed.

[0028] Embodiments of the present invention will be described below. Note that in all the drawings, any similar components will be given similar reference numerals or symbols, so that descriptions of these components will not be repeated.

[0029] figure 1 is a diagram showing the configuration of an etching apparatus used in the manufacturing method of a semiconductor device according to this embodiment. The etching apparatus has a processing chamber 10 , an electrode 20 , a stage 30 and a shield ring 40 . Process 10 allows etching gases to be introduced therein. The electrode 20 is arranged in the processing chamber 10 for generating plasma by ionizing ...

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Abstract

The present invention provides a method of manufacturing semiconductor devices and an etching device. In order to prevent peripheral portions of the layer to be etched from being roughened in the process of eliminating hardmask formed thereon, the etching device of the invention is provided with a process chamber, electrodes, a worktable and a shading ring, wherein, the process chamber allows etching gases to be introduced therein; the electrodes are disposed in the process chamber for generating plasma through ionizing the etching gases; the worktable with a substrate positioned thereon is positioned in the process chamber; the shading ring has irregular patterns on the edge therein and is positioned in the process chamber on the worktable (30), therefore, peripheral portions of the substrate and interior areas adjacent to the peripheral portions can be covered in a non-contact mode.

Description

[0001] Cross References to Related Applications [0002] This application is based on Japanese Patent Application No. 2008-125051, the contents of which are hereby incorporated by reference. technical field [0003] The invention relates to a manufacturing method and etching equipment of a semiconductor device using a shielding ring. Background technique [0004] Shield rings are sometimes used in etching equipment or film forming equipment for manufacturing semiconductor devices. The shield ring is an annular member arranged to cover the peripheral portion of the substrate, the purpose of which is to prevent an area of ​​a certain width from the edge of the substrate from being etched or being deposited with an arbitrary film (for example, see Japanese Laid-Open Patent Publication No. 2002 -294441 and No.2006-118004). In the absence of the shadow ring, the number of steps of the process would increase during the manufacturing process, including a step of grinding the peri...

Claims

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Application Information

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IPC IPC(8): H01L21/00H01L21/3065
CPCH01L21/308H01L21/67069Y10S438/944
Inventor 小室雅宏
Owner RENESAS ELECTRONICS CORP
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