Unlock instant, AI-driven research and patent intelligence for your innovation.

Vertically upward contact semiconductor and method thereof

A vertical upward, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as high parasitic inductance

Inactive Publication Date: 2012-06-13
DANFOSS SILICON POWER
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The disadvantage of this prior art is that in order to increase the available power, several SIP / DIP power section groups usually have to be connected in parallel
The additional space required for the printed conductors from the center of the package to the edge of the stamped grid means that making connections in this area is impossible and there is a problem with high parasitic inductance in addition to the intersection of mounting components with electrical switches

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vertically upward contact semiconductor and method thereof
  • Vertically upward contact semiconductor and method thereof
  • Vertically upward contact semiconductor and method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] figure 1An upward contacting lead frame is shown for power electronic semiconductors, such as ceramic or metal core conductor plates or stamped grid conductors, which must be protected by encapsulation of hardened material, which is pressed towards the bottom of the mold during encapsulation injection. Pressing prevents the insulating plastic from being injected under the underside of the leadframe (overmolding).

[0045] figure 1 Shown are semiconductors connected by bond wires, beneath which are printed copper conductors 12, an insulating ceramic layer 29, and beneath that a copper layer for heat dissipation. The contact body 16 is fitted on the substrate copper conductor 12 by any connection technique and advantageously comprises a rectilinear region 20 between its foot on the printed copper conductor 12 and its contact surface 24 (to which it may be connected after molding), This rectilinear region 20 is bendable when the contact surface 24 is pressed during loadi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a vertically upward contact semiconductor module, which includes a lead frame with a substrate, a semiconductor and an electric contact arranged on the substrate. The contact is formed to be upward conductive contact bodies (16, 28) opposite to a side face of the substrate and started from a conducting wire layer, wherein the contact bodies (16, 28) form a metal tongue-shaped piece (16) with two leg parts. The metal tongue-shaped piece is fixed on the lead frame in its free end part and includes an outward plane region connecting two leg parts as a contact surface (24). The contact is at least partially arranged in an injected molding material around the semiconductor.

Description

technical field [0001] The invention relates to a semiconductor with vertical upward contact and a manufacturing method thereof. Background technique [0002] In the state of the art, it is known to solder DCBs (direct copper bonds) with stamped grids, which are covered by molding material and comprise leads arranged laterally on the package (i.e., the semiconductor, carrying the semiconductor and its molding material) frame) on the line. [0003] The electrical connections of the leadframe are drawn partially from the center of the circuit to the edge. [0004] In order to achieve a high degree of electrical isolation between live parts (bonding wires, semiconductors and printed conductors) and to achieve very high mechanical stability or robustness, these products are obtained if the encapsulation is surrounded by a rigid plastic material. [0005] This manufacturing technique involves completely filling the volume of the mold body with a duroplastic, hard, glass-like po...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/48H01L25/00H01L23/31H01L21/56H01L21/50
CPCH01L2924/1815H01L25/072H01L2224/48472H01L24/48H01L2224/48091H01L2924/30107H01L2224/48247H01L2224/48227H01L2924/00014H01L2924/181
Inventor R·埃泽勒M·科克
Owner DANFOSS SILICON POWER